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Fast high fidelity hole spin initialization in a single InGaAs quantum dot

Source: Appl. Phys. Lett. 97, 061113 (2010); doi:10.1063/1.3476353

Published 13 August 2010

KEYWORDS and PACS
Keywords
PACS
  • 72.25.Dc
    Spin polarized transport in semiconductors
  • 73.63.Kv
    Quantum dots (electronic transport)
  • 73.21.La
    Quantum dots (electron states/collective excitations)
  • 71.70.Gm
    Exchange interactions (condensed matter)
  • 72.20.Jv
    Charge carriers: generation, recombination, lifetime, and trapping (semiconductors/insulators)
  • 73.40.Gk
    Tunneling (electronic transport)
  • YEAR: 2010
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PUBLICATION DATA
ISSN:
1553-9644 (online)
Publisher:
AIP is a member of CrossRef AIP
T. M. Godden, S. J. Boyle, A. J. Ramsay, A. M. Fox, and M. S. Skolnick
Department of Physics and Astronomy, University of Sheffield, Sheffield S3 7RH, United Kingdom
We demonstrate fast initialization of a single hole spin trapped in an InGaAs quantum dot with a fidelity F>99% and a 1/e time of ~30  ps, by applying a magnetic field parallel to the growth direction. We show that the fidelity of the hole spin, prepared by ionization of a photo-generated electron-hole pair, is limited by the precession of the exciton spin due to the anisotropic exchange interaction. ©2010 American Institute of Physics
History: Received 29 June 2010; accepted 17 July 2010; published 13 August 2010
Permalink: http://link.aip.org/link/?APPLAB/97/061113/1

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