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Effective Low-Energy Model for f-Electron Delocalization

Source: Phys. Rev. Lett. 105, 086402 (2010); doi:10.1103/PhysRevLett.105.086402

Published 19 August 2010

PACS
  • 71.30.+h
    Metal-insulator transitions and other electronic transitions
  • 72.80.Sk
    Electrical conductivity of insulators
  • 73.22.Gk
    Broken symmetry phases (nanoscale materials)
  • 74.25.Ha
    Magnetic properties of superconductors
  • YEAR: 2010
PUBLICATION DATA
ISSN:
1553-9644 (online)
Publisher:
AIP is a member of CrossRef APS
K. A. Al-Hassanieh, Yi-feng Yang, Ivar Martin, and C. D. Batista
Los Alamos National Laboratory, Los Alamos, New Mexico 87545, USA
We consider a periodic Anderson model (PAM) with a momentum-dependent interband hybridization that is strongly suppressed near the Fermi level. Under these conditions, we reduce the PAM to an effective low-energy Hamiltonian, Heff, by expanding in the small parameter V0/t (V0 is the maximum interband hybridization amplitude and t is the hopping integral of the broadband). The resulting model consists of a t-J f-band coupled via the Kondo exchange to the electrons in the broadband. Heff allows for studying the f-electron delocalization transition. The result is a doping-induced Mott transition for the f-electron delocalization, which we demonstrate by density-matrix renormalization group calculations.
History: Received 23 April 2010; published 19 August 2010
Permalink: http://link.aps.org/abstract/PRL/v105/e086402
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