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Determination of diffusion lengths in nanowires using cathodoluminescence

Source: Appl. Phys. Lett. 97, 072114 (2010); doi:10.1063/1.3473829

Published 19 August 2010

KEYWORDS and PACS
Keywords
PACS
  • 78.67.Lt
    Optical properties of quantum wires
  • 78.67.Uh
    Nanowires
  • 78.60.Hk
    Cathodoluminescence, ionoluminescence (condensed matter)
  • 81.15.Gh
    Chemical vapor deposition
  • 68.55.ag
    Semiconductor thin film nucleation and growth
  • 73.25.+i
    Surface conductivity and carrier phenomena
  • YEAR: 2010
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PUBLICATION DATA
ISSN:
1553-9644 (online)
Publisher:
AIP is a member of CrossRef AIP
Anders Gustafsson, Jessica Bolinsson, Niklas Sköld, and Lars Samuelson
Solid State Physics and Nanometer Structure Consortium, Lund University, P.O. Box 118, S-221 00 Lund, Sweden
We used cathodoluminescence imaging to determine diffusion lengths in III-V semiconductor nanowires, grown by metal-organic chemical vapor deposition seeded by gold nanoparticles. Intensity profiles were recorded either from the interface between the substrate and homogeneous nanowires, or from segments in nanowires containing axial heterostructures to determine the diffusion length. We determined diffusion lengths of 0.10 to 0.90  µm, the shortest for uncapped wires. The reduction is attributed largely to surface recombination. ©2010 American Institute of Physics
History: Received 29 March 2010; accepted 12 July 2010; published 19 August 2010
Permalink: http://link.aip.org/link/?APPLAB/97/072114/1

REFERENCES (15)

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  1. Y. Li, F. Qian, J. Xiang, and C. M. Lieber, Mater. Today 9, 18 (2006).
  2. A. Gustafsson, M. -E. Pistol, L. Montelius, and L. Samuelson, J. Appl. Phys. 84, 1715 (1998).
  3. S. M. Davidson, J. Microsc. 110, 177 (1977).
  4. D. Araújo, G. Oelgart, J. -D. Ganière, and F. K. Reinhart, Appl. Phys. Lett. 62, 2992 (1993).
  5. N. Pauc, M. R. Phillips, V. Aimez, and D. Drouin, Appl. Phys. Lett. 89, 161905 (2006).
  6. H. A. Zarem, P. C. Sercel, J. A. Lebens, L. R. Eng, A. Yariv, and K. J. Vahala, Appl. Phys. Lett. 55, 1647 (1989)
    7. H. A. Zarem, J. A. Lebens, K. B. Nordstrom, P. C. Sercel, S. Sanders, L. R. Eng, A. Yariv, and K. J. Vahala, ibid. 55, 2622 (1989).
  7. U. Jahn, S. Dhar, R. Hey, O. Brandt, J. Miguel-Sánchez, and A. Guzmán, Phys. Rev. B 73, 125303 (2006).
  8. D. Spirkoska, J. Arbiol, A. Gustafsson, S. Conesa-Boj, F. Glas, I. Zardo, M. Heigoldt, M. H. Gass, A. L. Bleloch, S. Estrade, M. Kaniber, J. Rossler, F. Peiro, J. R. Morante, L. Samuelson, G. Abstreiter, and A. Fontcuberta i Morral, Phys. Rev. B 80, 245325 (2009).
  9. The exponential slope can be approximated by sqrt(L[sub D][sup 2] + r[sup 2]), where r is the radius of the excitation volume, Ref. 3. r=30  nm and LD=100  nm gives a total slope of 105 nm.
  10. L. Samuelson and A. Gustafsson, Phys. Rev. Lett. 74, 2395 (1995).
  11. W. Seifert, M. Borgström, K. Deppert, K. A. Dick, J. Johansson, M. W. Larsson, T. Mårtensson, N. Sköld, C. P. T. Svensson, B. A. Wacaser, L. R. Wallenberg, and L. Samuelson, J. Cryst. Growth 272, 211 (2004).
  12. Y. Nagamune, H. Watabe, F. Sogawa, and Y. Arakawa, Appl. Phys. Lett. 67, 1535 (1995).
  13. J. E. Allen, E. R. Hemesath, D. E. Perea, J. L. Lensch-Falk, Z. Y. Li, F. Yin, M. H. Gass, P. Wang, A. L. Bleloch, R. E. Palmer, and L. J. Lauhon, Nat. Nanotechnol. 3, 168 (2008).
  14. H. J. Joyce, J. Wong-Leung, Q. Gao, H. H. Tan, and C. Jagadish, Nano Lett. 10, 908 (2010).
  15. N. Sköld, L. S. Karlsson, M. W. Larsson, M. -E. Pistol, W. Seifert, J. Trägårdh, and L. Samuelson, Nano Lett. 5, 1943 (2005).

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