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InGaN/GaN nanorod array white light-emitting diode

Source: Appl. Phys. Lett. 97, 073101 (2010); doi:10.1063/1.3478515

Published 16 August 2010

KEYWORDS and PACS
Keywords
PACS
  • 85.60.Jb
    Light-emitting devices
  • 78.67.Qa
    Nanorods
  • 78.67.De
    Optical properties of quantum wells
  • 78.20.Jq
    Electrooptical effects (bulk materials/thin films)
  • 78.60.Fi
    Electroluminescence (condensed matter)
  • 73.21.Fg
    Quantum wells (electron states/collective excitations)
  • 81.16.Dn
    Self-assembly in nanofabrication and processing
  • YEAR: 2010
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PUBLICATION DATA
ISSN:
1553-9644 (online)
Publisher:
AIP is a member of CrossRef AIP
Hon-Way Lin (林弘偉), Yu-Jung Lu (呂宥蓉), Hung-Ying Chen (陳虹穎), Hong-Mao Lee (李弘貿), and Shangjr Gwo (果尚志)
Department of Physics, National Tsing-Hua University, Hsinchu 30013, Taiwan
Conventional InGaN/GaN light-emitting diodes based on planar quantum well structures do not allow for efficient long-wavelength operation beyond the blue region due to a strong quantum confined Stark effect in lattice-mismatched polar InGaN quantum wells. Here we overcome the limitation by using self-assembled GaN nanorod arrays as strain-free growth templates for thick InGaN nanodisks. In combination with enhanced carrier localization and high crystalline quality, this approach allows us to realize full-color InGaN nanodisk emitters. By tailoring the numbers, positions, and thicknesses of polychromatic nanodisk ensembles embedded vertically in the GaN nanorod p-n junction, we are able to demonstrate natural white (color temperature ~6000  K) electroluminescence from InGaN/GaN nanorod arrays. ©2010 American Institute of Physics
History: Received 19 May 2010; accepted 5 June 2010; published 16 August 2010
Permalink: http://link.aip.org/link/?APPLAB/97/073101/1

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