Fabrication and photoluminescence of ZnS:Mn2+ nanowires/ZnO quantum dots/SiO2 heterostructure
Source: J. Appl. Phys. 108, 044304 (2010); doi:10.1063/1.3467762
Published 18 August 2010
KEYWORDS and PACS
II-VI semiconductors,
manganese,
mesoporous materials,
nanocomposites,
nanowires,
photoluminescence,
quenching (thermal),
red shift,
semiconductor quantum dots,
semiconductor quantum wires,
silicon compounds,
surface states,
ultraviolet spectra,
wide band gap semiconductors,
zinc compounds
- 81.07.-b
Nanoscale materials and structures: fabrication and characterization - 78.55.Hx
Photoluminescence in solid inorganic materials - 81.40.Gh
Other heat and thermomechanical treatments - 73.20.At
Surface states, band structure, electron density of states - 78.40.Ha
Visible and ultraviolet spectra of nonmetallic inorganics - 78.67.Sc
Nanoaggregates; nanocomposites - YEAR: 2010
RELATED DATABASES
To view database links for this article,
you need to log in.
you need to log in.
To view database links for this article,
you need to log in.
you need to log in.
PUBLICATION DATA
In this paper, we demonstrated the encapsulation of ZnS:Mn2+ nanowires (NWs) and ZnO quantum dots (QDs) with a layer of mesoporous SiO2 shell for the purpose of integrating dual emission property into one common nanostructure. The average diameter of ZnS:Mn2+ NWs, ZnO QDs, and ZnS:Mn2+/ZnO@SiO2 heterostructure was about 10 nm, 6 nm, and 22 nm, respectively. Within ZnS:Mn2+/ZnO@SiO2 nanocomposites, the intensity of the yellow-orange emission contributed by ZnS:Mn2+ NWs and the UV emission contributed by ZnO QDs was three and ten times higher than their individual components, respectively. The fluorescence intensity ratio of the dual emission can be tuned by adjusting the hydrolysis time of tetraethyl orthosilicate. The peak energy of the yellow-orange and UV emission showed blueshift and redshift as increasing the temperature, respectively. The anomalous enhancement of the integrated intensity for the UV emission with the temperature indicated that the high surface state density existing in ZnO QDs can overrun the influence of temperature quenching and even alter the photoluminescent properties.
©2010 American Institute of Physics
| History: | Received 28 March 2010; accepted 28 June 2010; published 18 August 2010 |
| Permalink: |
http://link.aip.org/link/?JAPIAU/108/044304/1 |
REFERENCES (45)
For access to fully linked references, you need to log in.
For access to fully linked references, you need to Log in.
- M. Y. Lu, J. H. Song, M. P. Lu, C. Y. Lee, L. J. Chen, and Z. L. Wang,
ACS Nano 3, 357 (2009) . - P. K. Santra, R. Viswanatha, S. M. Daniels, N. L. Pickett, J. M. Smith, P. O'Brien, and D. D. Sarma,
J. Am. Chem. Soc. 131, 470 (2009) . - M. W. Murphy, K. P. S. Grace, X. T. Zhou, J. G. Zhou, M. Coulliard, G. A. Botton, and T. K. Sham,
J. Phys. Chem. C 113, 4755 (2009) . - D. P. Wei, Y. Ma, H. Y. Pan, and Q. Chen,
J. Phys. Chem. C 112, 8594 (2008) . - S. Kar and S. Biswas, A. C. S. Appl. Mater. Interfaces 1, 1420 (2009).
- Y. Song, X. Cao, Y. Guo, P. Chen, Q. Zhao, and G. Shen,
Chem. Mater. 21, 68 (2009) . - R. S. Yang, Y. L. Chueh, J. R. Morber, R. Snyder, L. J. Chou, and Z. L. Wang,
Nano Lett. 7, 269 (2007) . - Z. W. Quan, D. M. Yang, C. X. Li, D. Y. Kong, P. P. Yang, Z. Y. Cheng, and J. Lin,
Langmuir 25, 10259 (2009) . - Q. J. Sun, Y. A. Wang, L. S. Li, D. Y. Wang, T. Zhu, J. Xu, C. H. Yang, and Y. F. Li,
Nat. Photonics 1, 717 (2007) . - Y. Yang, Y. -Q. Li, and S. -Y. Fu, and H. -M. Xiao,
J. Phys. Chem. C 112, 10553 (2008) . - J. Yan, X. Fang, L. Zhang, Y. Bando, U. K. Gautam, B. Dierre, T. Sekiguchi, and D. Golberg,
Nano Lett. 8, 2794 (2008) . - X. Fan, M. L. Zhang, I. Shafiq, W. J. Zhang, C. S. Lee, and S. T. Lee,
Adv. Mater. 21, 2393 (2009) . - L. Yu, X. F. Yu, Y. Qiu, Y. Chen, and S. Yang,
Chem. Phys. Lett. 465, 272 (2008) . - K. M. Sulieman, X. Huang, J. Liu, and M. Tang,
Smart Mater. Struct. 16, 89 (2007) . - V. Wood, J. E. Halpert, M. J. Panzer, M. G. Bawendi, and V. Bulovic,
Nano Lett. 9, 2367 (2009) . - Y. Fang, S. Chu, H. Chen, P. Kao, I. Chen, and C. Hwang,
J. Electrochem. Soc. 156, K55 (2009) . - T. P. Surkova, V. R. Galakhov, and E. Z. Kurmaev, Low Temp. Phys. 35, 79 (2009).
- R. N. Bhargava and D. Gallagher, Phys. Rev. Lett. 72, 416 (1994).
- S. Biswas, S. Kar, and S. Chaudhuri,
J. Phys. Chem. B 109, 17526 (2005) . - J. Yang, X. Liu, L. Yang, Y. Wang, Y. Zhang, J. Lang, M. Gao, and B. Feng,
J. Alloys Compd. 477, 632 (2009) . - S. Kar, S. Santra, and H. Heinrich,
J. Phys. Chem. C 112, 4036 (2008) . - F. Li, X. Huang, Y. Jiang, L. Liu, and Z. Li,
Mater. Res. Bull. 44, 437 (2009) . - F. Gu, C. Z. Li, S. F. Wang, and M. K. Lu,
Langmuir 22, 1329 (2006) . - P. K. Sharma, R. K. Dutta, M. Kumar, P. K. Singh, and A. C. Pandey,
J. Lumin. 129, 605 (2009) . - Z. Li, W. Shen, L. Fang, and X. Zu,
J. Alloys Compd. 463, 129 (2008) . - S. K. Mandal, A. R. Mandal, S. Das, and B. Bhattacharjee, J. Appl. Phys. 101, 114315 (2007).
- J. Finster,
Surf. Interface Anal. 12, 309 (1988) . - D. Sprenger, H. Bach, W. Meisel, and P. Gütlich,
J. Non-Cryst. Solids 126, 111 (1990) . - H. C. Ong and R. P. H. Chang, Appl. Phys. Lett. 79, 3612 (2001).
- J. Y. Lao, J. Y. Huang, D. Z. Wang, and Z. F. Ren,
Nano Lett. 3, 235 (2003) . - N. Pradhan and S. Efrima,
J. Phys. Chem. B 108, 11964 (2004) . - M. V. Limaye, S. Gokhale, S. A. Acharya, and S. K. Kulkarni,
Nanotechnology 19, 415602 (2008) . - K. Sooklal, B. S. Cullum, S. M. Angel, and C. J. Murphy,
J. Phys. Chem. 100, 4551 (1996) . - L. Yang, J. Yang, X. Liu, Y. Zhang, Y. Wang, H. Fan, D. Wang, and J. Lang,
J. Alloys Compd. 463, 92 (2008) . - Y. W. Chen, Q. Qiao, Y. C. Liu, and G. L. Yang,
J. Phys. Chem. C 113, 7497 (2009) . - D. Jiang, L. Cao, W. Liu, G. Su, H. Qu, Y. Sun, and B. Dong,
Nanoscale Res. Lett. 4, 78 (2009) . - Y. M. Niquet, G. Allan, C. Delerue, and M. Lannoo, Appl. Phys. Lett. 77, 1182 (2000).
- M. S. Sander, R. Gronsky, Y. M. Lin, and M. S. Dresselhaus, J. Appl. Phys. 89, 2733 (2001).
- Y. F. Zhu, D. H. Fan, and W. Z. Shen,
J. Phys. Chem. C 112, 10402 (2008) . - W. Zhang, G. Chen, J. Wang, B. C. Ye, and X. Zhong,
Inorg. Chem. 48, 9723 (2009) . - Z. Fang, Y. Li, H. Zhang, X. Zhong, and L. Zhu,
J. Phys. Chem. C 113, 14145 (2009) . - W. Chen, F. Su, G. Li, A. G. Joly, J. O. Malm, and J. O. Bovin, J. Appl. Phys. 92, 1950 (2002).
- R. Muñoz-Espí, G. Jeschke, I. Lieberwirth, C. M. Gómez, and G. Wegner,
J. Phys. Chem. B 111, 697 (2007) . - W. Chen, V. F. Aguekian, N. Vassiliev, A. Y. Serov, and N. G. Filosofov, J. Chem. Phys. 123, 124707 (2005).
- F. H. Su, B. S. Ma, Z. L. Fan, K. Ding, G. H. Li, and W. Chen,
J. Phys.: Condens. Matter 14, 12657 (2002) .
ADVERTISEMENT


