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Fabrication and photoluminescence of ZnS:Mn2+ nanowires/ZnO quantum dots/SiO2 heterostructure

Source: J. Appl. Phys. 108, 044304 (2010); doi:10.1063/1.3467762

Published 18 August 2010

KEYWORDS and PACS
Keywords
PACS
  • 81.07.-b
    Nanoscale materials and structures: fabrication and characterization
  • 78.55.Hx
    Photoluminescence in solid inorganic materials
  • 81.40.Gh
    Other heat and thermomechanical treatments
  • 73.20.At
    Surface states, band structure, electron density of states
  • 78.40.Ha
    Visible and ultraviolet spectra of nonmetallic inorganics
  • 78.67.Sc
    Nanoaggregates; nanocomposites
  • YEAR: 2010
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PUBLICATION DATA
ISSN:
1553-9644 (online)
Publisher:
AIP is a member of CrossRef AIP
Jinghai Yang,1 Jian Cao,1,2 Lili Yang,1 Yongjun Zhang,1 Yaxin Wang,1 Xiaoyan Liu,1 Dandan Wang,2 Maobin Wei,1 Ming Gao,1 and Jihui Lang1
1Institute of Condensed State Physics, Jilin Normal University, Siping 136000, People's Republic of China and Key Laboratory of Functional Materials Physics and Chemistry, Jilin Normal University, Siping 136000, People's Republic of China
2Key Laboratory of Excited State Physics, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, 3888 Eastern Nan-Hu Road, Changchun 130033, People's Republic of China and Graduate School of Chinese Academy of Sciences, Beijing 100049, People's Republic of China

In this paper, we demonstrated the encapsulation of ZnS:Mn2+ nanowires (NWs) and ZnO quantum dots (QDs) with a layer of mesoporous SiO2 shell for the purpose of integrating dual emission property into one common nanostructure. The average diameter of ZnS:Mn2+ NWs, ZnO QDs, and ZnS:Mn2+/ZnO@SiO2 heterostructure was about 10 nm, 6 nm, and 22 nm, respectively. Within ZnS:Mn2+/ZnO@SiO2 nanocomposites, the intensity of the yellow-orange emission contributed by ZnS:Mn2+ NWs and the UV emission contributed by ZnO QDs was three and ten times higher than their individual components, respectively. The fluorescence intensity ratio of the dual emission can be tuned by adjusting the hydrolysis time of tetraethyl orthosilicate. The peak energy of the yellow-orange and UV emission showed blueshift and redshift as increasing the temperature, respectively. The anomalous enhancement of the integrated intensity for the UV emission with the temperature indicated that the high surface state density existing in ZnO QDs can overrun the influence of temperature quenching and even alter the photoluminescent properties. ©2010 American Institute of Physics
History: Received 28 March 2010; accepted 28 June 2010; published 18 August 2010
Permalink: http://link.aip.org/link/?JAPIAU/108/044304/1

REFERENCES (45)

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  1. M. Y. Lu, J. H. Song, M. P. Lu, C. Y. Lee, L. J. Chen, and Z. L. Wang, ACS Nano 3, 357 (2009).
  2. P. K. Santra, R. Viswanatha, S. M. Daniels, N. L. Pickett, J. M. Smith, P. O'Brien, and D. D. Sarma, J. Am. Chem. Soc. 131, 470 (2009).
  3. M. W. Murphy, K. P. S. Grace, X. T. Zhou, J. G. Zhou, M. Coulliard, G. A. Botton, and T. K. Sham, J. Phys. Chem. C 113, 4755 (2009).
  4. D. P. Wei, Y. Ma, H. Y. Pan, and Q. Chen, J. Phys. Chem. C 112, 8594 (2008).
  5. S. Kar and S. Biswas, A. C. S. Appl. Mater. Interfaces 1, 1420 (2009).
  6. Y. Song, X. Cao, Y. Guo, P. Chen, Q. Zhao, and G. Shen, Chem. Mater. 21, 68 (2009).
  7. R. S. Yang, Y. L. Chueh, J. R. Morber, R. Snyder, L. J. Chou, and Z. L. Wang, Nano Lett. 7, 269 (2007).
  8. Z. W. Quan, D. M. Yang, C. X. Li, D. Y. Kong, P. P. Yang, Z. Y. Cheng, and J. Lin, Langmuir 25, 10259 (2009).
  9. Q. J. Sun, Y. A. Wang, L. S. Li, D. Y. Wang, T. Zhu, J. Xu, C. H. Yang, and Y. F. Li, Nat. Photonics 1, 717 (2007).
  10. Y. Yang, Y. -Q. Li, and S. -Y. Fu, and H. -M. Xiao, J. Phys. Chem. C 112, 10553 (2008).
  11. J. Yan, X. Fang, L. Zhang, Y. Bando, U. K. Gautam, B. Dierre, T. Sekiguchi, and D. Golberg, Nano Lett. 8, 2794 (2008).
  12. X. Fan, M. L. Zhang, I. Shafiq, W. J. Zhang, C. S. Lee, and S. T. Lee, Adv. Mater. 21, 2393 (2009).
  13. L. Yu, X. F. Yu, Y. Qiu, Y. Chen, and S. Yang, Chem. Phys. Lett. 465, 272 (2008).
  14. K. M. Sulieman, X. Huang, J. Liu, and M. Tang, Smart Mater. Struct. 16, 89 (2007).
  15. V. Wood, J. E. Halpert, M. J. Panzer, M. G. Bawendi, and V. Bulovic, Nano Lett. 9, 2367 (2009).
  16. Y. Fang, S. Chu, H. Chen, P. Kao, I. Chen, and C. Hwang, J. Electrochem. Soc. 156, K55 (2009).
  17. T. P. Surkova, V. R. Galakhov, and E. Z. Kurmaev, Low Temp. Phys. 35, 79 (2009).
  18. R. N. Bhargava and D. Gallagher, Phys. Rev. Lett. 72, 416 (1994).
  19. S. Biswas, S. Kar, and S. Chaudhuri, J. Phys. Chem. B 109, 17526 (2005).
  20. J. Yang, X. Liu, L. Yang, Y. Wang, Y. Zhang, J. Lang, M. Gao, and B. Feng, J. Alloys Compd. 477, 632 (2009).
  21. S. Kar, S. Santra, and H. Heinrich, J. Phys. Chem. C 112, 4036 (2008).
  22. F. Li, X. Huang, Y. Jiang, L. Liu, and Z. Li, Mater. Res. Bull. 44, 437 (2009).
  23. F. Gu, C. Z. Li, S. F. Wang, and M. K. Lu, Langmuir 22, 1329 (2006).
  24. P. K. Sharma, R. K. Dutta, M. Kumar, P. K. Singh, and A. C. Pandey, J. Lumin. 129, 605 (2009).
  25. Z. Li, W. Shen, L. Fang, and X. Zu, J. Alloys Compd. 463, 129 (2008).
  26. S. K. Mandal, A. R. Mandal, S. Das, and B. Bhattacharjee, J. Appl. Phys. 101, 114315 (2007).
  27. J. Finster, Surf. Interface Anal. 12, 309 (1988).
  28. D. Sprenger, H. Bach, W. Meisel, and P. Gütlich, J. Non-Cryst. Solids 126, 111 (1990).
  29. H. C. Ong and R. P. H. Chang, Appl. Phys. Lett. 79, 3612 (2001).
  30. J. Y. Lao, J. Y. Huang, D. Z. Wang, and Z. F. Ren, Nano Lett. 3, 235 (2003).
  31. N. Pradhan and S. Efrima, J. Phys. Chem. B 108, 11964 (2004).
  32. M. V. Limaye, S. Gokhale, S. A. Acharya, and S. K. Kulkarni, Nanotechnology 19, 415602 (2008).
  33. K. Sooklal, B. S. Cullum, S. M. Angel, and C. J. Murphy, J. Phys. Chem. 100, 4551 (1996).
  34. L. Yang, J. Yang, X. Liu, Y. Zhang, Y. Wang, H. Fan, D. Wang, and J. Lang, J. Alloys Compd. 463, 92 (2008).
  35. Y. W. Chen, Q. Qiao, Y. C. Liu, and G. L. Yang, J. Phys. Chem. C 113, 7497 (2009).
  36. D. Jiang, L. Cao, W. Liu, G. Su, H. Qu, Y. Sun, and B. Dong, Nanoscale Res. Lett. 4, 78 (2009).
  37. Y. M. Niquet, G. Allan, C. Delerue, and M. Lannoo, Appl. Phys. Lett. 77, 1182 (2000).
  38. M. S. Sander, R. Gronsky, Y. M. Lin, and M. S. Dresselhaus, J. Appl. Phys. 89, 2733 (2001).
  39. Y. F. Zhu, D. H. Fan, and W. Z. Shen, J. Phys. Chem. C 112, 10402 (2008).
  40. W. Zhang, G. Chen, J. Wang, B. C. Ye, and X. Zhong, Inorg. Chem. 48, 9723 (2009).
  41. Z. Fang, Y. Li, H. Zhang, X. Zhong, and L. Zhu, J. Phys. Chem. C 113, 14145 (2009).
  42. W. Chen, F. Su, G. Li, A. G. Joly, J. O. Malm, and J. O. Bovin, J. Appl. Phys. 92, 1950 (2002).
  43. R. Muñoz-Espí, G. Jeschke, I. Lieberwirth, C. M. Gómez, and G. Wegner, J. Phys. Chem. B 111, 697 (2007).
  44. W. Chen, V. F. Aguekian, N. Vassiliev, A. Y. Serov, and N. G. Filosofov, J. Chem. Phys. 123, 124707 (2005).
  45. F. H. Su, B. S. Ma, Z. L. Fan, K. Ding, G. H. Li, and W. Chen, J. Phys.: Condens. Matter 14, 12657 (2002).
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