Surface plasmon-enhanced light emission using silver nanoparticles embedded in ZnO
Source: Appl. Phys. Lett. 97, 071909 (2010); doi:10.1063/1.3480417
Published 19 August 2010
KEYWORDS and PACS
II-VI semiconductors,
ion implantation,
nanoparticles,
photoluminescence,
semiconductor thin films,
silicon compounds,
silver,
spontaneous emission,
substrates,
surface plasmons,
transmission electron microscopy,
wide band gap semiconductors,
zinc compounds
- 61.46.Df
Structure of nanocrystals and nanoparticles - 81.05.Dz
II-VI semiconductors: fabrication, treatment, testing and analysis - 81.07.Bc
Nanocrystalline materials: fabrication and characterization - 68.55.ag
Semiconductor thin film nucleation and growth - 85.40.Ry
Impurity doping, diffusion and ion implantation technology (microelectronics) - 78.55.Et
Photoluminescence in II-VI semiconductors - YEAR: 2010
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PUBLICATION DATA
The Ag nanoparticles-SiO2–ZnO film sandwiched structure was fabricated by depositing ZnO films on silica substrates which had been implanted by Ag ions. Enhancement of emission of the sandwiched structure was observed. The enhancement emission is caused by the resonant coupling between the surface plasmons of Ag and the spontaneous emission of ZnO. The enhancement mechanism is confirmed by optical absorption spectra, transmission electron microscopy, and time-resolved photoluminescence. The key is to deposit ZnO on Ag nanoparticles covered with silica to prevent oxidation of Ag by direct contact with ZnO. This structure will be very useful for highly efficient optoelectronic devices.
©2010 American Institute of Physics
| History: | Received 19 May 2010; accepted 26 July 2010; published 19 August 2010 |
| Permalink: |
http://link.aip.org/link/?APPLAB/97/071909/1 |
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