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Room temperature single nanowire ZnTe photoconductors grown by metal-organic chemical vapor deposition

Source: Appl. Phys. Lett. 97, 063510 (2010); doi:10.1063/1.3478555

Published 13 August 2010

KEYWORDS and PACS
Keywords
PACS
  • 81.07.Gf
    Nanowires
  • 68.65.-k
    Low-dimensional, mesoscopic, and nanoscale systems: structure and nonelectronic properties
  • 81.15.Gh
    Chemical vapor deposition
  • 72.40.+w
    Photoconduction and photovoltaic effects
  • 72.20.Jv
    Charge carriers: generation, recombination, lifetime, and trapping (semiconductors/insulators)
  • YEAR: 2010
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PUBLICATION DATA
ISSN:
1553-9644 (online)
Publisher:
AIP is a member of CrossRef AIP
Zhong Li, Joseph Salfi, Christina De Souza, Ping Sun, Selvakumar V. Nair, and Harry E. Ruda
Centre for Advanced Nanotechnology, University of Toronto, 170 College Street, Toronto, Ontario M5S 3E3, Canada
Single nanowire ZnTe photoconductors prepared by metal-organic chemical vapor deposition are presented. These photodetectors exhibit the highest reported visible responsivity of 360 A/W (at 530 nm) and gain of 8640 (at 3 V bias). The high gain reflects a long carrier lifetime (i.e., ~1  µs) and the role of fast selective trapping of one carrier is presented to explain this. These results reveal that such single ZnTe nanowires are excellent candidates for applications requiring high performance visible nanoscale photoconductive detectors. ©2010 American Institute of Physics
History: Received 7 July 2010; accepted 21 July 2010; published 13 August 2010
Permalink: http://link.aip.org/link/?APPLAB/97/063510/1

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