A study on the modulation of the electrical transport by mechanical straining of individual titanium dioxide nanotube
Source: Appl. Phys. Lett. 97, 072107 (2010); doi:10.1063/1.3466663
Published 17 August 2010
KEYWORDS and PACS
elastic limit,
electrical conductivity,
electron diffraction,
electron-phonon interactions,
metal-semiconductor-metal structures,
scanning tunnelling microscopy,
semiconductor materials,
semiconductor nanotubes,
titanium compounds,
transmission electron microscopy
- 72.80.-r
Electrical conductivity of specific materials - 62.20.F-
Deformation and plasticity of solids - 68.37.Og
High-resolution transmission electron microscopy (HRTEM) of surfaces, interfaces and thin films - 68.37.Hk
Scanning electron microscopy (SEM) of surfaces, interfaces and thin films - 73.40.Sx
Electrical properties of metal-semiconductor-metal structures - YEAR: 2010
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PUBLICATION DATA
We report here, the deformation driven modulation of the electrical transport properties of an individual TiO2 nanotube via in situ transmission electron microscopy (TEM) using a scanning tunneling microscopy system. The current-voltage characteristics of each individual TiO2 nanotube revealed that under bending deformation within the elastic limit, the electrical conductivity of a TiO2 nanotube can be enhanced. High resolution TEM and electron diffraction pattern reveal that TiO2 nanotubes have tetragonal structure (a=0.378 nm, c=0.9513 nm, I41/amd). Analysis based on a metal-semiconductor-metal model suggests that in-shell, surface defect-driven conduction modes and electron–phonon coupling effect are responsible for the modulated semiconducting behaviors.
©2010 American Institute of Physics
| History: | Received 17 March 2010; accepted 16 June 2010; published 17 August 2010 |
| Permalink: |
http://link.aip.org/link/?APPLAB/97/072107/1 |
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