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A study on the modulation of the electrical transport by mechanical straining of individual titanium dioxide nanotube

Source: Appl. Phys. Lett. 97, 072107 (2010); doi:10.1063/1.3466663

Published 17 August 2010

KEYWORDS and PACS
Keywords
PACS
  • 72.80.-r
    Electrical conductivity of specific materials
  • 62.20.F-
    Deformation and plasticity of solids
  • 68.37.Og
    High-resolution transmission electron microscopy (HRTEM) of surfaces, interfaces and thin films
  • 68.37.Hk
    Scanning electron microscopy (SEM) of surfaces, interfaces and thin films
  • 73.40.Sx
    Electrical properties of metal-semiconductor-metal structures
  • YEAR: 2010
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PUBLICATION DATA
ISSN:
1553-9644 (online)
Publisher:
AIP is a member of CrossRef AIP
A. Asthana,1 T. Shokuhfar,1,2 Q. Gao,1 P. Heiden,3 C. Friedrich,1,2 and R. S. Yassar1
1Department of Mechanical Engineering-Engineering Mechanics, Michigan Technological University, Houghton, Michigan 49931, USA
2Multi-Scale Technologies Institute, Michigan Technological University, Houghton, Michigan 49931, USA
3Departmentof Chemistry, Michigan Technological University, Houghton, Michigan 49931, USA

We report here, the deformation driven modulation of the electrical transport properties of an individual TiO2 nanotube via in situ transmission electron microscopy (TEM) using a scanning tunneling microscopy system. The current-voltage characteristics of each individual TiO2 nanotube revealed that under bending deformation within the elastic limit, the electrical conductivity of a TiO2 nanotube can be enhanced. High resolution TEM and electron diffraction pattern reveal that TiO2 nanotubes have tetragonal structure (a=0.378  nm, c=0.9513  nm, I41/amd). Analysis based on a metal-semiconductor-metal model suggests that in-shell, surface defect-driven conduction modes and electron–phonon coupling effect are responsible for the modulated semiconducting behaviors. ©2010 American Institute of Physics
History: Received 17 March 2010; accepted 16 June 2010; published 17 August 2010
Permalink: http://link.aip.org/link/?APPLAB/97/072107/1

REFERENCES (26)

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  1. M. Adachi, Y. Murata, I. Okada, and S. Yoshikawa, J. Electrochem. Soc. 150, G488 (2003).
  2. O. K. Varghese, D. Gong, M. Paulose, K. G. Paulose, and C. A. Grimes, Sens. Actuators B 93, 338 (2003).
  3. G. Armstrong, A. R. Armstrong, P. G. Bruce, P. Reale, and B. Scrosati, Adv. Mater. (Weinheim, Ger.) 18, 2597 (2006).
  4. T. Umebayashi, T. Yamaki, H. Itoh, and K. Asai, J. Phys. Chem. Solids 2, 5320 (2002).
  5. Y. H. Kim, K. J. Chang, and S. G. Louie, Phys. Rev. B 63, 205408 (2001).
  6. X. Bai, D. Goldberg, Y. Bando, C. Zhi, C. Tang, M. Mitome, and K. Kurashima, Nano Lett. 7, 632 (2007).
  7. H. P. Maruska and A. K. Gosh, Sol. Energy 20, 443 (1978).
  8. Y. K. Lai, L. Sun, C. Chen, C. G. Nie, J. Zuo, and C. J. Lin, Appl. Surf. Sci. 252, 1101 (2005).
  9. M. Villafuerte, G. Juarez, S. P. de Heluani, and D. Comedi, Physica B 398, 321 (2007).
  10. J. M. Macak, H. Tsuchiya, S. Berger, S. Bauer, S. Fujimoto, and P. Schmuki, Chem. Phys. Lett. 428, 421 (2006).
  11. G. F. Ortiz, I. Hanzu, P. Knauth, P. Lavela, J. L. Tirado, and T. Djenizian, Electrochim. Acta 54, 4262 (2009).
  12. F. A. Padovani and R. Stratton, Solid-State Electron. 9, 695 (1966).
  13. Z. Y. Zhang, C. H. Jin, X. L. Liang, Q. Chen, and L. -M. Peng, Appl. Phys. Lett. 88, 073102 (2006).
  14. M. Stamate, G. Lazar, and I. Lazar, Rom. J. Phys.53, 217 (2008).
  15. H. Tang, K. Prasad, R. Sanjines, P. E. Schmidt, and F. Levy, J. Appl. Phys. 75, 2042 (1994).
  16. E. Hendry, F. Wang, J. Shan, T. F. Heinz, and M. Bonn, Phys. Rev. B 69, 081101 (2004).
  17. E. Yagi, R. R. Hasiguti, and M. Aono, Phys. Rev. B 54, 7945 (1996).
  18. G. A. Acket and J. Volger, Physica (Amsterdam) 30, 1667 (1964).
  19. V. N. Bogomolov and V. P. Zhuze, Sov. Phys. Solid State 5, 2404 (1964).
  20. H. Y. Peng, M. D. McCluskey, Y. M. Gupta, M. A. Kneissl, and N. M. Johnson, Phys. Rev. B 71, 115207 (2005).
  21. K. Nishidate and M. Hasegawa, Phys. Rev. B 78, 195403 (2008).
  22. S. D. Mahanti, K. Hoang, and S. Ahmad, Physica B 401, 291 (2007).
  23. J. Robertson, O. Sharia, and A. A. Demkov, Appl. Phys. Lett. 91, 132912 (2007).
  24. M. Huang, P. Rugheimer, M. G. Lagally, and F. Liu, Phys. Rev. B 72, 085450 (2005).
  25. M. S. Arnold, P. Avouris, Z. W. Pan, and Z. L. Wang, J. Phys. Chem. B 107, 659 (2003).
  26. X. Lin, X. B. He, T. Z. Yang, W. Gao, D. X. Shi, H. -J. Gao, D. D. D. Ma, T. S. Lee, F. Liu, and X. C. Xie, Appl. Phys. Lett. 89, 043103 (2006).

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