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Local strain in tunneling transistors based on graphene nanoribbons

Source: Appl. Phys. Lett. 97, 073105 (2010); doi:10.1063/1.3479915

Published 17 August 2010

KEYWORDS and PACS
Keywords
PACS
  • 85.30.Tv
    Semiconductor field effect devices
  • 63.22.Kn
    Phonons and vibrational states in clusters and nanocrystals
  • YEAR: 2010
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PUBLICATION DATA
ISSN:
1553-9644 (online)
Publisher:
AIP is a member of CrossRef AIP
Yang Lu and Jing Guo
Department of Electrical and Computer Engineering, University of Florida, Gainesville, Florida 32611-6130, USA
A band-to-band tunneling field-effect transistor (FET) can achieve a subthreshold slope steeper than 60 mV/dec at room temperature, but the on-current is low due to existence of the tunneling barrier. Graphene has a monolayer-thin body which is amenable to strain. By using self-consistent quantum transport simulations, we show that with local strain applied at the tunneling junction between the source and the channel in a graphene nanoribbon tunneling FET, the on-current can be significantly improved by over a factor of 10 with the same off-current, no matter at the ballistic limit or in the presence of inelastic phonon scattering. ©2010 American Institute of Physics
History: Received 7 May 2010; accepted 21 July 2010; published 17 August 2010
Permalink: http://link.aip.org/link/?APPLAB/97/073105/1

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