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Surface electronic structure of ZrB2 buffer layers for GaN growth on Si wafers

Source: Appl. Phys. Lett. 97, 073109 (2010); doi:10.1063/1.3481414

Published 18 August 2010

KEYWORDS and PACS
Keywords
PACS
  • 73.20.At
    Surface states, band structure, electron density of states
  • 68.55.ag
    Semiconductor thin film nucleation and growth
  • 79.60.Bm
    Photoelectron spectra of clean metal, semiconductor, and insulator surfaces
  • 73.30.+y
    Surface double layers, Schottky barriers, and work functions
  • 73.61.Ey
    Electrical properties of III-V semiconductors (thin films)
  • 73.61.At
    Electrical properties of metal and metallic alloys (thin films)
  • YEAR: 2010
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PUBLICATION DATA
ISSN:
1553-9644 (online)
Publisher:
AIP is a member of CrossRef AIP
Yukiko Yamada-Takamura, Fabio Bussolotti, Antoine Fleurence, Sambhunath Bera, and Rainer Friedlein
School of Materials Science and Research Center for Integrated Science, Japan Advanced Institute of Science and Technology (JAIST), 1-1 Asahidai, Nomi, Ishikawa 923-1292 Japan
The electronic structure of epitaxial, predominantly single-crystalline thin films of zirconium diboride (ZrB2), a lattice-matching, conductive ceramic to GaN, grown on Si(111) was studied using angle-resolved ultraviolet photoelectron spectroscopy. The existence of Zr-derived surface states dispersing along the [overline Gamma ]-[overline M] direction indicates a metallic character provided by a two-dimensional Zr-layer at the surface. Together with the measured work function, the results demonstrate that the surface electronic properties of such thin ZrB2(0001) buffer layers are comparable to those of the single crystals promising excellent conduction between nitride layers and the substrate in vertical light-emitting diodes on economic substrates. ©2010 American Institute of Physics
History: Received 16 April 2010; accepted 31 July 2010; published 18 August 2010
Permalink: http://link.aip.org/link/?APPLAB/97/073109/1

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