Home | About Journal | Web Links | E-mail Alerts | RSS RSS Icon | Browse
Previous Article Next Article

Electronic and magnetic properties of zigzag graphene nanoribbons with periodic protruded edges

Source: Phys. Rev. B 82, 085425 (2010); doi:10.1103/PhysRevB.82.085425

Published 17 August 2010

PACS
  • 73.22.Pr
    Electronic structure of graphene
  • 73.20.At
    Surface states, band structure, electron density of states
  • 75.75.-c
    Magnetic properties of nanostructures
  • 71.15.Mb
    Density functional theory, local density approximation, gradient and other corrections (condensed matter electronic structure)
  • YEAR: 2010
PUBLICATION DATA
ISSN:
1553-9644 (online)
Publisher:
AIP is a member of CrossRef APS
Wenzhi Wu, Zhuhua Zhang, Peng Lu, and Wanlin Guo
Institute of Nanoscience, Nanjing University of Aeronautics and Astronautics, Nanjing 210016, China
The electronic and magnetic properties of zigzag graphene nanoribbons with protruded steps along their edges (ZS-GNRs) are investigated by extensive density-functional theory calculations. We show that the electronic and magnetic properties are determined by an interesting interplay between the length of the protruded step and the distance of two adjacent steps along the ribbon edge. With a small length of the protruded steps along the edge, the system can be converted from a nonmagnetic semiconductor to metal and then to a magnetic semiconductor by increasing the step-to-step distance. In particular, the energy gap decreases first toward a zero minimum and then gradually increases as the step length increases, accompanying with the rapid increase in the edge magnetization. When the step length exceeds a critical value, the ZS-GNR will be always a magnetic semiconductor regardless of the step-to-step distance. We also reveal that the applied transverse electric field can enlarge the energy gap of nonmagnetic ZS-GNRs, due to the breaking of band degeneration; whereas the field-induced gap change in the magnetic ZS-GNRs is spin dependent, leading to the emergence of amazing half metallicity under certain field strengths. These findings suggest that the ZS-GNRs are promising for designing versatile graphene-based devices and can find novel applications in both electronics and spintronics. ©2010 The American Physical Society
History: Received 22 March 2010; published 17 August 2010
Permalink: http://link.aps.org/abstract/PRB/v82/e085425
ADVERTISEMENT