Crystal-induced effects at crystal/amorphous interfaces: The case of Si3N4/SiO2
Source: Phys. Rev. B 82, 081412 (2010); doi:10.1103/PhysRevB.82.081412
Published 25 August 2010
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We reveal the presence of atomic short-range ordering at the interface between crystalline 
-Si3N4 and amorphous SiO2 using aberration-corrected scanning transmission electron microscopy. We show that the first atomic layers of the amorphous SiO2 film reconstruct taking on the crystalline form of Si3N4. Furthermore, we find that there is a nonuniform interatomic mixing of oxygen and nitrogen at different atomic sites at the interface. The work provides a direct look at the atomic structure of crystal/amorphous interfaces composed of light elements.
©2010 The American Physical Society
-Si3N4 and amorphous SiO2 using aberration-corrected scanning transmission electron microscopy. We show that the first atomic layers of the amorphous SiO2 film reconstruct taking on the crystalline form of Si3N4. Furthermore, we find that there is a nonuniform interatomic mixing of oxygen and nitrogen at different atomic sites at the interface. The work provides a direct look at the atomic structure of crystal/amorphous interfaces composed of light elements.
©2010 The American Physical Society
| History: | Received 2 July 2010; revised 10 August 2010; published 25 August 2010 |
| Permalink: |
http://link.aps.org/abstract/PRB/v82/e081412 |
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