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Effects of surface chemistry on thermal conductance at aluminum–diamond interfaces

Source: Appl. Phys. Lett. 97, 083102 (2010); doi:10.1063/1.3480413

Published 23 August 2010

KEYWORDS and PACS
Keywords
PACS
  • 82.65.+r
    Surface and interface chemistry; heterogeneous catalysis at surfaces
  • 66.70.-f
    Nonelectronic thermal conduction and heat-pulse propagation in solids
  • 61.72.-y
    Defects and impurities in crystals; microstructure
  • YEAR: 2010
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PUBLICATION DATA
ISSN:
1553-9644 (online)
Publisher:
AIP is a member of CrossRef AIP
Kimberlee C. Collins, Shuo Chen, and Gang Chen
Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, USA
Synthetic diamond has potential as a heat spreading material in small-scale devices. Here, we report thermal conductance values at interfaces between aluminum and diamond with various surface terminations over a range of temperatures from 88 to 300 K. We find that conductance at oxygenated diamond interfaces is roughly four times higher than at hydrogen-treated diamond interfaces. Furthermore, we find that Al grain structure formation is not strongly dependent on diamond surface chemistry, which suggests that interfacial bonding influences thermal conductance. The results reported here will be useful for device design and for advancing models of interfacial heat flow. ©2010 American Institute of Physics
History: Received 9 June 2010; accepted 28 July 2010; published 23 August 2010
Permalink: http://link.aip.org/link/?APPLAB/97/083102/1

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