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Self-assembled cyclic oligothiophene nanotubes: Electronic properties from a dispersion-corrected hybrid functional

Source: Phys. Rev. B 84, 075115 (2011); http://dx.doi.org/10.1103/PhysRevB.84.075115

Published 8 August 2011

PACS
  • 61.46.Np
    Structure of nanotubes (hollow nanowires)
  • 71.15.Mb
    Density functional theory, local density approximation, gradient and other corrections (condensed matter electronic structure)
  • 73.22.-f
    Electronic structure of nanoscale materials
  • 78.67.Ch
    Optical properties of nanotubes
  • YEAR: 2011
PUBLICATION DATA
ISSN:
1553-9644 (online)
Publisher:
AIP is a member of CrossRef APS
Bryan M. Wong1 and Simon H. Ye2
1Materials Chemistry Department, Sandia National Laboratories, Livermore, California 94551, USA
2Department of Chemistry, Stanford University, Stanford, California 94309, USA

The band structure and size scaling of electronic properties in self-assembled cyclic oligothiophene nanotubes are investigated using density functional theory. In these unique tubular aggregates, the pi-pi stacking interactions between adjacent monomers provide pathways for charge transport and energy migration along the periodic one-dimensional nanostructure. In order to simultaneously describe both the pi-pi stacking interactions and the global electronic band structure of these nanotubes, we utilize a dispersion-corrected Becke three-parameter Lee-Yang-Parr-D (B3LYP-D) hybrid functional in conjunction with all-electron basis sets and one-dimensional periodic boundary conditions. Based on our B3LYP-D calculations, we present simple analytical formulae for estimating the fundamental band gaps of these unique nanotubes as a function of size and diameter. Our results on these molecular nanostructures indicate that all of the oligothiophene nanotubes are direct-gap semiconductors with band gaps ranging from 0.9 to 3.3 eV, depending on tube diameter and oligothiophene orientation. These nanotubes have cohesive energies of up to 2.43 eV per monomer, indicating future potential use in organic electronic devices due to their tunable electronic band structure and high structural stability.
History: Received 25 December 2010; published 8 August 2011
Digital Object Identifier: http://dx.doi.org/10.1103/PhysRevB.84.075115
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