Home | About Journal | Web Links | E-mail Alerts | RSS RSS Icon | Browse
Next Article

Different strain relief behaviors in Al0.35Ga0.65N/GaN multiple quantum wells on GaN/Sapphire templates with AlN/GaN supperlattices and low-temperature AlN interlayers

Source: J. Appl. Phys. 111, 016105 (2012); http://dx.doi.org/10.1063/1.3676266

Published 10 January 2012

KEYWORDS and PACS
Keywords
PACS
  • 81.40.Lm
    Deformation, plasticity, and creep
  • 62.20.F-
    Deformation and plasticity of solids
  • 62.20.mt
    Cracks in solids
  • 61.72.Hh
    Indirect evidence of dislocations and other defects
  • 81.15.Gh
    Chemical vapor deposition
  • YEAR: 2011
RELATED DATABASES

To view database links for this article,
you need to log in.
To view database links for this article,
you need to log in.
PUBLICATION DATA
ISSN:
1553-9644 (online)
Publisher:
AIP is a member of CrossRef AIP
C. C. Huang,1 F. J. Xu,1 J. Song,1 Z. Y. Xu,1 J. M. Wang,1 R. Zhu,1 G. Chen,1 X. Q. Wang,1 Z. J. Yang,1 B. Shen,1 X. S. Chen,2 and W. Lu2
1State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing 100871, China
2National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China
Strain relief behaviors in Al0.35Ga0.65N/GaN multiple quantum wells (MQWs) grown on GaN/sapphire templates with either AlN/GaN supperlattices (SLs) or low-temperature AlN (LT-AlN) interlayers (ILs) between the MQWs and templates have been investigated. These two IL techniques can both effectively relieve the tensile strain in the MQWs, leading to crack-free surfaces and high crystalline quality. Further analysis shows that there are two distinct strain relief channels. In the case of adopting AlN/GaN SLs IL, microcracks and misfit dislocations account for strain relief in the MQWs. Microcracks are first generated in the IL, followed by activating formation of misfit dislocations. Then, the microcracks are immediately filled up by the subsequent epilayers. Contrastively, strain relief by using LT-AlN IL is mainly through the self relaxation process of the MQWs by surface roughening and strain compensation effect of LT-AlN IL. ©2012 American Institute of Physics
History: Received 5 December 2011; accepted 14 December 2011; published 10 January 2012
Digital Object Identifier: http://dx.doi.org/10.1063/1.3676266

REFERENCES (18)

For access to fully linked references, you need to log in. For access to fully linked references, you need to Log in.
  1. E. Baumann, F. R. Giorgetta, D. Hofstetter, S. Golka, W. Schrenk, G. Strasser, L. Kirste, S. Nicolay, E. Feltin, J. F. Carlin, and N. Grandjean, Appl. Phys. Lett. 89, 041106 (2006)
  2. J. S. Yang, H. Sodabanlu, M. Sugiyama, Y. Nakano, and Y. Shimogaki, Appl. Phys. Lett. 95, 162111 (2009).
  3. Y. Kotsar, B. Doisneau, E. Bellet-Amalric, A. Das, E. Sarigiannidou, and E. Monroy, J. Appl. Phys. 110, 033501 (2011).
  4. H. Machhadani, P. Kandaswamy, S. Sakr, A. Vardi, A. Wirtmuller, L. Nevou, F. Guillot, G. Pozzovivo, M. Tchernycheva, A. Lupu, L. Vivien, P. Crozat, E. Warde, C. Bougerol, S. Schacham, G. Strasser, G. Bahir, E. Monroy, and F. H. Julien, New J. Phys. 11, 125023 (2009).
  5. C. C. Huang, F. J. Xu, X. D. Yan, J. Song, Z. Y. Xu, L. B. Cen, Y. Wang, J. H. Pan, X. Q. Wang, Z. J. Yang, B. Shen, B. S. Zhang, X. S. Chen, and W. Lu, Appl. Phys. Lett. 98, 132105 (2011).
  6. P. Boguslawski, K. Rapcewicz, and J. J. Bernholc, Phys. Rev. B 61, 10820 (2000).
  7. H. Amano, M. Iwaya, N. Hayashi, T. Kashima, S. Nitta, C. Wetzel, and I. Akasaki, Phys. Stat. Sol. (b) 216, 683 (1999).
  8. J. Han, K. E. Waldrip, S. R. Lee, J. J. Figiel, S. J. Hearne, G. A. Petersen, and S. M. Myers, Appl. Phys. Lett. 78, 67 (2001).
  9. C. Q. Chen, J. P. Zhang, M. E. Gaevski, H. M. Wang, W. H. Sun, R. S. Q. Fareed, J. W. Yang, and M. Asif Khan, Appl. Phys. Lett. 81, 4961 (2002).
  10. J.-M. Bethoux and P. Vennéguèsa, J. Appl. Phys. 97, 123504 (2005)
  11. S. J. Hearne, J. Han, S. R. Lee, J. A. Floro, D. M. Follstaedt, E. Chason, and I. S. T. Tsong, Appl. Phys. Lett. 76, 1534 (2000).
  12. C. McAleese, M. J. Kappers, F. D. G. Rayment, P. Cherns, and C. J. Humphreys, J. Cryst. Growth 272, 475 (2004).
  13. Peter D. Cherns, Clifford McAleese, Jonathan S. Barnard, Menno J. Kappers, and Colin J. Humphreys, Mater. Res. Soc. Symp. Proc. 892, 0892 (2006).
  14. Q. Sun, Y. Huang, H. Wang, J. Chen, R. Q. Jin, S. M. Zhang, H. Yang, D. S. Jiang, U. Jahn, and K. H. Ploog, Appl. Phys. Lett. 87, 121914 (2005).
  15. S. Einfeldt, H. Heinke, V. Kirchner, and D. Hommel, J. Appl. Phys. 89, 2160 (2001).
  16. In-Hwan Lee, Tae Geun Kim, and Yongjo Park, J. Cryst. Growth 234, 305 (2002).
  17. S. Nicolay, E. Feltin, J.-F. Carlin, N. Grandjean, L. Nevou, F. H. Julien, M. Schmidbauer, T. Remmele, and M. Albrecht, Appl. Phys. Lett. 91, 061927 (2007).
  18. P. K. Kandaswamy, C. Bougerol, D. Jalabert, P. Ruterana, and E. Monroy, J. Appl. Phys. 106, 013526 (2009).
ADVERTISEMENT