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Direct patterning of functional interfaces in oxide heterostructures

Source: Appl. Phys. Lett. 100, 041601 (2012); http://dx.doi.org/10.1063/1.3679379

Published 23 January 2012

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ISSN:
1553-9644 (online)
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AIP is a member of CrossRef AIP
N. Banerjee, M. Huijben, G. Koster, and G. Rijnders
Faculty of Science & Technology and MESA+ Institute for Nanotechnology, University of Twente, P.O. Box 217, 7500 AE, Enschede, The Netherlands
We report on the direct patterning of high-quality structures incorporating the LaAlO3-SrTiO3 interface by an epitaxial-liftoff technique avoiding any reactive ion beam etching. Detailed studies of temperature dependent magnetotransport properties were performed on the patterned heterostructures with variable thickness of the LaAlO3 layer and compared to their unstructured thin film analogues. The results demonstrate the conservation of the high-quality interface properties in the patterned structures enabling future studies of low-dimensional confinement on high mobility interface conductivity as well as interface magnetism. ©2012 American Institute of Physics
History: Received 23 November 2011; accepted 5 January 2012; published 23 January 2012
Digital Object Identifier: http://dx.doi.org/10.1063/1.3679379

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