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Gallium-droplet behaviors of self-catalyzed GaAs nanowires: A transmission electron microscopy study

Source: Appl. Phys. Lett. 100, 033117 (2012); http://dx.doi.org/10.1063/1.3678185

Published 20 January 2012

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PUBLICATION DATA
ISSN:
1553-9644 (online)
Publisher:
AIP is a member of CrossRef AIP
Young Heon Kim, Dong Woo Park, and Sang Jun Lee
Korea Research Institute of Standards and Science, Daejeon 305-340, South Korea
When the arsenic (As) precursor was supplied during cool down, the gallium (Ga) droplets on top of GaAs nanowires (NWs) were extinct on the final products. The Ga droplets were conserved, and their behaviors depended on the size of the NWs when the As supply was cut off during the cooling: The contact angles of the droplets on the NWs with diameters larger than 60 nm were fixed to approximately 113°. However, they were decreased and fluctuated on the NWs less than 60 nm in diameter. Finally, the NWs less than 46 nm were free from the Ga droplet. ©2012 American Institute of Physics
History: Received 10 September 2011; accepted 29 December 2011; published 20 January 2012
Digital Object Identifier: http://dx.doi.org/10.1063/1.3678185

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