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Electron-phonon scattering in topological insulator thin films

Source: Phys. Rev. B 85, 035441 (2012); http://dx.doi.org/10.1103/PhysRevB.85.035441

Published 25 January 2012

PACS
PUBLICATION DATA
ISSN:
1553-9644 (online)
Publisher:
AIP is a member of CrossRef APS
Sébastien Giraud, Arijit Kundu, and Reinhold Egger
Institut für Theoretische Physik, Heinrich-Heine-Universität, D-40225 Düsseldorf, Germany
We present a theoretical study of electron-phonon scattering effects in thin films made of a strong topological insulator. The phonons are modeled by isotropic elastic continuum theory with stress-free boundary conditions, and the interaction with the helical surface Dirac fermions is mediated by the deformation potential. We determine the temperature-dependent electrical resistivity rho(T) and the quasiparticle decay rate Gamma(T) observable in photoemission. The low- and high-temperature power laws for both quantities are obtained analytically. Detailed estimates covering the full temperature range are provided for Bi2Se3.
History: Received 17 November 2011; revised 10 January 2012; published 25 January 2012
Digital Object Identifier: http://dx.doi.org/10.1103/PhysRevB.85.035441
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