Tunable Resistivity of Individual Magnetic Domain Walls
Source: Phys. Rev. Lett. 108, 037205 (2012); http://dx.doi.org/10.1103/PhysRevLett.108.037205
Published 20 January 2012
Despite the relevance of current-induced magnetic domain wall (DW) motion for new spintronics applications, the exact details of the current-domain wall interaction are not yet understood. A property intimately related to this interaction is the intrinsic DW resistivity. Here, we investigate experimentally how the resistivity inside a DW depends on the wall width
, which is tuned using focused ion beam irradiation of Pt/Co/Pt strips. We observe the nucleation of individual DWs with Kerr microscopy, and measure resistance changes in real time. A 1/
2 dependence of DW resistivity is found, compatible with Levy-Zhang theory. Also quantitative agreement with theory is found by taking full account of the current flowing through each individual layer inside the multilayer stack.
, which is tuned using focused ion beam irradiation of Pt/Co/Pt strips. We observe the nucleation of individual DWs with Kerr microscopy, and measure resistance changes in real time. A 1/
2 dependence of DW resistivity is found, compatible with Levy-Zhang theory. Also quantitative agreement with theory is found by taking full account of the current flowing through each individual layer inside the multilayer stack.
| History: | Received 26 October 2011; published 20 January 2012 |
| Digital Object Identifier: |
http://dx.doi.org/10.1103/PhysRevLett.108.037205 |
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