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Side-dependent electron escape from graphene- and graphane-like SiC layers

Source: Appl. Phys. Lett. 100, 043110 (2012); http://dx.doi.org/10.1063/1.3679175

Published 26 January 2012

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ISSN:
1553-9644 (online)
Publisher:
AIP is a member of CrossRef AIP
Paola Gori,1 Olivia Pulci,2 Margherita Marsili,2 and Friedhelm Bechstedt3
1ETSF, CNR-ISM, via Fosso del Cavaliere 100, 00133 Rome, Italy
2ETSF, CNR-ISM, NAST, MIFP, Dipartimento di Fisica, Università di Roma “Tor Vergata,” Via della Ricerca Scientifica 1, 00133 Rome, Italy
3IFTO, Friedrich-Schiller-Universität and ETSF, Max-Wien-Platz 1, 07743 Jena, Germany
The structural and electronic properties of SiC-based two-dimensional (2D) crystals are studied by means of density functional theory and many-body perturbation theory. Such properties cannot simply be interpolated between graphene and silicene. The replacement of half of the C atoms by Si atoms opens a large direct electronic gap and destroys the Dirac cones. Hydrogenation further opens the gap and significantly reduces the electron affinity to 0.1 or 1.8 eV in dependence on the carbon or silicon termination of the 2D crystal surface, thus showing a unique direction dependent ionization potential. This suggests the use of 2D-SiC:H as electron or hole filter. ©2012 American Institute of Physics
History: Received 15 September 2011; accepted 31 December 2011; published 26 January 2012
Digital Object Identifier: http://dx.doi.org/10.1063/1.3679175

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