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Improved electron field emission from morphologically disordered monolayer graphene

Source: Appl. Phys. Lett. 100, 043104 (2012); http://dx.doi.org/10.1063/1.3679135

Published 24 January 2012

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ISSN:
1553-9644 (online)
Publisher:
AIP is a member of CrossRef AIP
Srikrishna Pandey,1 Padmnabh Rai,1,2 Shashikant Patole,3 Fethullah Gunes,3 Gi-Duk Kwon,1 Ji-Beom Yoo,3 Pavel Nikolaev,1 and Sivaram Arepalli1
1Department of Energy Science, Sungkyunkwan University, Suwon 440746, South Korea
2Laboratoire Interdisciplinaire Carnot de Bourgogne, CNRS-UMR 6303, Université of Bourgogne, Dijon 21078, France
3Sungkyunkwan Advanced Institute of Nanotechnology and School of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon 440746, South Korea
Graphene was synthesized on copper foil by thermal chemical vapor deposition technique. To investigate the field electron emission property, planar graphene (PG) and morphologically disordered graphene (MDG) were fabricated on the doped silicon substrate by transfer of as-grown graphene. Incorporation of morphological disorder in graphene creates more emission sites due to the additional defects, edges, and atomic scale ripples. This resulted in (1) a dramatic increase in the maximum current density by a factor of 500, (2) considerable increase in the enhancement factor, and (3) decrease in the turn-on field of MDG compared to PG. ©2012 American Institute of Physics
History: Received 8 November 2011; accepted 4 January 2012; published 24 January 2012
Digital Object Identifier: http://dx.doi.org/10.1063/1.3679135

REFERENCES (29)

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  1. W. A. de Heer, A. Chatelain, and D. Ugarte, Science 270, 1179 (1995).
  2. S. S. Fan, M. G. Chapline, N. R. Franklin, T. W. Tombler, A. M. Cassell, and H. J. Dai, Science 283, 512 (1999).
  3. J. M. Bonard, J. P. Salvetat, T. Stockli, L. Forro, and A. Chatelain, Appl. Phys. A: Mater. Sci. Proc. 69, 245 (1999).
  4. J. M. Bonard, H. Kind, T. Stockli, and L. A. Nilsson, Solid State Electron. 45, 893 (2001).
  5. L. R. Baylor, V. I. Merkulov, E. D. Ellis, M. A. Guillorn, D. H. Lowndes, A. V. Melechko, M. L. Simpson, and J. H. Whealton, J. Appl. Phys. 91, 4602 (2002).
  6. N. S. Xu, S. E. Huq, Mater. Sci. Eng. R. 48, 47 (2005).
  7. K. S. Novoselov, A. K. Geim, S. V. Morozov, D. Jiang, Y. Zhang, S. V. Dubonos, I. V. Grigorieva, and A. A. Firsov, Science 306, 666 (2004).
  8. A. K. Geim and K. S. Novoselov, Nat. Mater. 6, 183 (2007).
  9. Y. Kopelevich and P. Esquinazi, Adv. Mater. 19, 4559 (2007).
  10. S. Stankovich, D. A. Dikin, G. H. B. Dommett, K. M. Kohlhaas, E. J. Zimney, E. A. Stach, R. D. Piner, S. T. Nguyev, and R. S. Ruoff, Nature 442, 282 (2006).
  11. Z.-S. Wu, S. Pei, W. Ren, D. Tang, L. Gao, B. Liu, F. Li, C. Liu, and H.-M. Cheng, Adv. Mater. 21, 1756 (2009).
  12. M. Qian, T. Feng, H. Ding, L. Lin, H. Li, Y. Chen, and Z. Sun, Nanotechnology 20, 425702 (2009).
  13. A. Malesevic, R. Kemps, A. Vanhulsel, M. P. Chowdhury, A. Volodin, and C. V. Haesendonck, J. Appl. Phys. 104, 084301 (2008).
  14. J. L. Qi, X. Wang, W. T. Zheng, H. W. Tian, C. Q. Hu, and Y. S. Peng, J. Phys. D: Appl. Phys. 43, 055302 (2010).
  15. U. A. Palnitkar, R. V. Kashid, M. A. More, D. S. Joag, L. S. Panchakarla, and C. N. R. Rao, Appl. Phys. Lett. 97, 063102 (2010).
  16. F. Gunes, H.-J. Shin, C. Biswas, G. H. Han, E. S. Kim, S. J. Chae, J.-Y. Choi, and Y. H. Lee, ACS Nano 4, 4595 (2010).
  17. X. Li, W. Cai, J. An, S. Kim, J. Nah, D. Yang, R. Piner, A. Velamakanni, I. Jung, E. Tutuc, S. K. Banerjee, L. Colombo, and R. S. Ruoff, Science 324, 1312 (2009).
  18. S. Stankovich, D. A. Dikin, R. D. Piner, K. A. Kohlhaas, A. Kleinhammes, Y. Jia, Y. Wu, S. T. Nguyen, and R. S. Ruoff, Carbon 45, 1558 (2007).
  19. L. M. Malarda, M. A. Pimentaa, G. Dresselhaus, and M. S. Dresselhaus, Phys. Rep. 473, 51 (2009).
  20. A. Reina, X. Jia, J. Ho, D. Nezich, H. Son, V. Bulovic, M. S. Dresselhaus, and J. Kong, Nano Lett. 9, 30 (2009).
  21. P. Rai, D. R. Mohapatra, K. S. Hazra, D. S. Misra, and S. P. Tiwari, Appl. Phys. Lett. 93, 131921 (2008).
  22. S. K. Patra and G. M. Rao, J. Appl. Phys. 100, 024319 (2006).
  23. R. C. Smith, J. D. Carey, R. J. Murphy, W. J. Blau, J. N. Coleman, and S. R. P. Silva, Appl. Phys. Lett. 87, 263105 (2005).
  24. J. Zhang, C. Yang, W. Yang, T. Feng, X. Wang, and X. Liu, Solid State Commun. 138, 13 (2006).
  25. C. M. Tan, J. Jia, and W. Yu, Appl. Phys. Lett. 86, 263104 (2005).
  26. G. Giovannetti, P. A. Khomyakov, G. Brocks, V. M. Karpan, J. van den Brink, and P. J. Kelly, Phys. Rev. Lett. 101, 026803 (2008).
  27. G. Zhou, W. H. Duan, and B. L. Gu, Appl. Phys. Lett. 79, 836 (2001).
  28. J. W. Qadzuk, Phys. Rev. B 47, 12832 (1993).
  29. G. Zhou, W. H. Duan, and B. L. Gu, Phys. Rev. Lett. 87, 095504 (2001).
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