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High-temperature annealing of thin Au films on Si: Growth of SiO2 nanowires or Au dendritic nanostructures?

Source: Appl. Phys. Lett. 100, 053102 (2012); http://dx.doi.org/10.1063/1.3679614

Published 30 January 2012

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ISSN:
1553-9644 (online)
Publisher:
AIP is a member of CrossRef AIP
F. Ruffino,1,2 L. Romano,1,2 G. Pitruzzello,1,3 and M. G. Grimaldi1,2
1Dipartimento di Fisica ed Astronomia-Università di Catania, via S. Sofia 64, 95123 Catania, Italy
2MATIS IMM-CNR, via S. Sofia 64, 95123 Catania, Italy
3Scuola Superiore di Catania, Via Valdisavoia 9, I-95123 Catania, Italy
A simple and low-cost approach for the large-scale production of Au nanodendritic structures on Si is presented. Starting from the methodology involving deposition of a Au film on Si and heating the system to high temperatures in an inert ambient containing trace amounts of oxygen for the growth of SiO2 nanowires (NWs), we show that a suppression of the NWs growth and a promotion of the growth of Au nanodendrites occur when fast heating and cooling rates are used. We analyze the nanodendrites formation process considering the kinetics processes at the Au/Si interface in far from thermodynamic equilibrium situation. ©2012 American Institute of Physics
History: Received 7 December 2011; accepted 8 January 2012; published 30 January 2012
Digital Object Identifier: http://dx.doi.org/10.1063/1.3679614

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