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Position-controlled [100] InP nanowire arrays

Source: Appl. Phys. Lett. 100, 053107 (2012); http://dx.doi.org/10.1063/1.3679136

Published 30 January 2012

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PUBLICATION DATA
ISSN:
1553-9644 (online)
Publisher:
AIP is a member of CrossRef AIP
Jia Wang,1 Sébastien Plissard,1 Moïra Hocevar,2 Thuy T. T. Vu,1 Tilman Zehender,1 George G. W. Immink,3 Marcel A. Verheijen,1,3 Jos Haverkort,1 and Erik P. A. M. Bakkers1,2
1Department of Applied Physics, Eindhoven University of Technology, P.O. Box 513, 5600 MB Eindhoven, The Netherlands
2Kavli Institute of Nanoscience, Delft University of Technology, 2628CJ Delft, The Netherlands
3Philips Innovation Services Eindhoven, High Tech Campus 11, 5656AE Eindhoven, The Netherlands
We investigate the growth of vertically standing [100] zincblende InP nanowire (NW) arrays on InP (100) substrates in the vapor-liquid-solid growth mode using low-pressure metal-organic vapor-phase epitaxy. Precise positioning of these NWs is demonstrated by electron beam lithography. The vertical NW yield can be controlled by different parameters. A maximum yield of 56% is obtained and the tapering caused by lateral growth can be prevented by in situ HCl etching. Scanning electron microscopy, high-resolution transmission electron microscopy, and micro-photoluminescence have been used to investigate the NW properties. ©2012 American Institute of Physics
History: Received 25 November 2011; accepted 4 January 2012; published 30 January 2012
Digital Object Identifier: http://dx.doi.org/10.1063/1.3679136

REFERENCES (26)

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  1. X. F. Duan, Y. Huang, Y. Cui, J. F. Wang, and C. M. Lieber, Nature 409, 66 (2001).
  2. J. Wang, M. S. Gudiksen, X. Duan, Y. Cui, and C. M. Lieber, Science 24, 1455 (2001).
  3. Y. Ding, J. Motohisa, B. Hua, S. Hara, and T. Fukui, Nano Lett. 7, 3598 (2007).
  4. R. Yan, D. Gargas, and P. Yang, Nat. Photon. 3, 569 (2009).
  5. H. Goto, K. Nosaki, K. Tomioka, S. Hara, K. Hiruma, J. Motohisa, and T. Fukui, Appl. Phys. Express 2, 035004 (2009).
  6. M. T. Borgström, J. Wallentin, M. Heurlin, S. Fält, P. Wickert, J. Leene, M. H. Magnusson, K. Deppert, and L. Samuelson, IEEE J. Sel. Top. Quantum Electron. 17, 1050 (2010).
  7. M. T. Björk, B. J. Ohlsson, C. Thelander, A. I. Persson, K. Deppert, L. R. Wallenberg, and L. Samuelson, Appl. Phys. Lett. 81, 4458 (2002).
  8. E. D. Minot, F. Kelkensberg, M. van Kouwen, J. A. van Dam, L. P. Kouwenhoven, V. Zwiller, M. T. Borgström, O. Wunnicke, M. A. Verheijen, and E. P. A. M. Bakkers, Nano Lett. 7, 367 (2007).
  9. P. Mohan, J. Motohisa, and T. Fukui, Appl. Phys. Lett. 88, 133105 (2006).
  10. S. Bhunia, T. Kawamura, S. Fujikawa, H. Nakashima, K. Furukawa, K. Torimitsu, and Y. Watanabe, Thin Solid Films 464, 244 (2004).
  11. Q. Xiong, J. Wang, and P. C. Eklund, Nano Lett. 6(12), 2736 (2006).
  12. R. E. Algra, M. A. Verheijen, M. T. Borgström, L. Feiner, G. Immink, W. J. P. van Enckevort, E. Vlieg, and E. P. A. M. Bakkers, Nature 456, 369 (2008).
  13. J. Bao, D. C. Bell, F. Capasso, J. B. Wagner, T. Mårtensson, J. Trägårdh, and L. Samuelson, Nano Lett. 8, 836 (2008).
  14. K. Ikejiri, Y. Kitauchi, K. Tomioka, J. Motohisa, and T. Fukui, Nano Lett. 11(10), 4314 (2011).
  15. N. Akopian, G. Patriarche, L. Liu, J. C. Harmand, and V. Zwiller, Nano Lett. 10, 1198 (2010).
  16. Z. Ikonic, G. P. Srivastava, and J. C. Inkson, Phys. Rev. B 52, 14078 (1995).
  17. M. D. Schroer and J. R. Petta, Nano Lett. 10, 1618 (2010).
  18. S. A. Dayeh, D. Susac, K. L. Kavanagh, E. T. Yu, and D. Wang, Adv. Funct. Mater. 19, 2102 (2009).
  19. C. Thelander, P. Caroff, S. Plissard, A. W. Dey, and K. A. Dick, Nano Lett. 11, 2424 (2011).
  20. U. Krishnamachari, M. Borgstrom, B. J. Ohlsson, N. Panev, L. Samuelson, W. Seifert, M. W. Larsson, and L. R. Wallenberg, Appl. Phys. Lett. 85, 2077 (2004).
  21. R. S. Wagner and W. C. Ellis, Appl. Phys. Lett. 4, 89 (1964).
  22. A. Pierret, M. Hocevar, S. L Diedenhofen, R. E Algra, E. Vlieg, E. C. Timmering, M. A. Verschuuren, G. W. G. Immink, M. A Verheijen, and E. P. A. M. Bakkers, Nanotechnology 21, 065305 (2010).
  23. M. T. Borgström, J. Wallentin, J. Trägårdh, P. Ramvall, M. Ek, L. R. Wallenberg, L. Samuelson, and K. Deppert, Nano Res. 3, 264 (2010).
  24. A. Mikkelsen, J. Eriksson, E. Lundgren, J. N. Andersen, J. Weissenrieder, and W. Seifert, Nanotechnology 16, 2354 (2005).
  25. M. H. M. van Weert, N. Akopian, U. Perinetti, M. P. van Kouwen, R. E. Algra, M. A. Verheijen, E. P. A. M. Bakkers, L. P. Kouwenhoven, and V. Zwiller, Nano Lett. 9, 1989 (2009).
  26. R. Singh and G. Bester, Phys. Rev. Lett. 103, 063601 (2009).
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