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Room-temperature single molecular memory

Source: Appl. Phys. Lett. 100, 053101 (2012); http://dx.doi.org/10.1063/1.3679127

Published 30 January 2012

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PUBLICATION DATA
ISSN:
1553-9644 (online)
Publisher:
AIP is a member of CrossRef AIP
Shinya Kano,1,2 Yasuyuki Yamada,3,2 Kentaro Tanaka,4,2 and Yutaka Majima1,2,5
1Materials and Structures Laboratory, Tokyo Institute of Technology, Yokohama 226-8503, Japan
2CREST, Japan Science and Technology Agency, Yokohama 226-8503, Japan
3Research Center for Materials Science, Nagoya University, Nagoya 464-8602, Japan
4Department of Chemistry, Graduate School of Science, Nagoya University, Nagoya 464-8602, Japan
5Department of Printed Electronics Engineering, Sunchon National University, Sunchon 540-742, South Korea
Single molecular memory operation was observed on a porphyrin derivative by scanning tunneling microscopy at room temperature. A porphyrin derivative with four disulfide groups was chemically synthesized and chemisorbed on a Au(111) surface. Coulomb blockade behaviors and switching behaviors in current-voltage (I-V) characteristics were observed on a single porphyrin derivative by scanning tunneling spectroscopy. Based on the switching behaviors, the memory operation of electrical conductance in the porphyrin derivative was demonstrated by applying a programmed pulse sequence with an on/off ratio of 2.9 at room temperature. ©2012 American Institute of Physics
History: Received 21 October 2011; accepted 7 November 2011; published 30 January 2012
Digital Object Identifier: http://dx.doi.org/10.1063/1.3679127

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