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Analysis of hysteresis characteristics of silicon nanowire biosensors in aqueous environment

Source: Appl. Phys. Lett. 99, 252103 (2012); http://dx.doi.org/10.1063/1.3669409

Published 20 December 2011

EPAPS
KEYWORDS and PACS
Keywords
PACS
  • 87.85.Rs
    Nanotechnologies - applications in biomedical engineering
  • 73.40.Qv
    Electrical properties of metal-insulator-semiconductor structures
  • 85.85.+j
    Micro- and nano-electromechanical systems (MEMS/NEMS) and devices
  • 87.85.Ox
    Biomedical instrumentation and transducers
  • YEAR: 2011
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PUBLICATION DATA
ISSN:
1553-9628 (online)
Publisher:
AIP is a member of CrossRef AIP
Hyeri Jang,1 Jieun Lee,1 Jung Han Lee,2 Sungmin Seo,3 Byung-Gook Park,2 Dong Myong Kim,1 Dae Hwan Kim,1 and In-Young Chung4
1School of Electrical Engineering, Kookmin University, Seoul 136-702, South Korea
2Electrical Engineering and Computer Science, Seoul National University, Seoul 151-742, South Korea
3DRAM Design Team, Samsung Electronics, Hwasung-City, Gyeonggi-Do 445-701, Korea
4Dept. of Electronics and Communications, Kwangwoon University, Seoul 139-701, South Korea
The hysteresis phenomenon has been widely observed in transfer characteristics of silicon nanowire (SiNW) biosensor devices in aqueous environment. Considering the experimental observation in the change of the liquid potential due to the charge flow through the oxide layer, we build up an electrical model for the biosensor system with the solution, SiNW, dielectric oxide, and the back-gated substrate, and investigate the hysteresis behavior based on the model. ©2011 American Institute of Physics
History: Received 25 July 2011; accepted 20 November 2011; published 20 December 2011
Digital Object Identifier: http://dx.doi.org/10.1063/1.3669409

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