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Reducing quantum-regime dielectric loss of silicon nitride for superconducting quantum circuits

Source: Appl. Phys. Lett. 96, 072505 (2010); doi:10.1063/1.3309703

Published 17 February 2010

KEYWORDS and PACS
Keywords
PACS
  • 77.22.Gm
    Dielectric loss and relaxation
  • 77.84.Bw
    Dielectric, piezoelectric, and ferroelectric elements, oxides, nitrides, borides, carbides, chalcogenides, etc
  • 68.55.Ln
    Thin film defects and impurities
  • 77.55.-g
    Dielectric thin films
  • YEAR: 2010
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PUBLICATION DATA
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Hanhee Paik and Kevin D. Osborn
Laboratory for Physical Sciences, College Park, Maryland 20740, USA
The loss of amorphous hydrogenated silicon nitride (a-SiNx:H) is measured at 30 mK and 5 GHz using a superconducting LC resonator down to energies where a single-photon is stored, and analyzed with an independent two-level system defect model. Each a-SiNx:H film was deposited with different concentrations of hydrogen impurities. We find that quantum-regime dielectric loss tangent tan delta0 in a-SiNx:H is strongly correlated with N–H impurities, including NH2. By slightly reducing x we are able to reduce tan delta0 by approximately a factor of 50, where the best films show tan delta0~=3×10−5. ©2010 American Institute of Physics
History: Received 11 November 2009; accepted 16 January 2010; published 17 February 2010
Permalink: http://link.aip.org/link/?APPLAB/96/072505/1

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