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Strength of correlations in electron- and hole-doped cuprates

Source: Nature Phys. 6, 574 (2010); doi:10.1038/nphys1706

Issue Date: 15 August 2010

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Cdric Weber
Department of Physics, Rutgers University, Piscataway, New Jersey 08854, USA

Kristjan Haule
Department of Physics, Rutgers University, Piscataway, New Jersey 08854, USA

Gabriel Kotliar
Department of Physics, Rutgers University, Piscataway, New Jersey 08854, USA
The introduction of holes in a parent compound consisting of copper oxide layers results in high-temperature superconductivity. It is also possible to dope the cuprate parent compound with electrons. The physical properties of these electron-doped materials bear some similarities to but also significant differences from those of their hole-doped counterparts. Here, we use a recently developed first-principles method to study the electron-doped cuprates and elucidate the deep physical reasons behind their behaviour being so different from that of the hole-doped materials. The crystal structure of the electron-doped compounds is characterized by a lack of apical oxygens, and we find that it results in a parent compound that is a Slater insulatora material in which the insulating behaviour is the result of the presence of magnetic long-range order. This is in sharp contrast with the hole-doped materials, which are insulating owing to the strong electronic correlations but not owing to magnetism. ©2010

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