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In-Plane Resistivity Anisotropy in an Underdoped Iron Arsenide Superconductor

Source: Science 329, 824 (2010); doi:10.1126/science.1190482

Issue Date: 15 August 2010

PUBLICATION DATA
Publisher:
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Jiun-Haw Chu,ff1,ff2 James G. Analytis,ff1,ff2 Kristiaan De Greve,ff3 Peter L. McMahon,ff3 Zahirul Islam,ff4 Yoshihisa Yamamoto,ff3,ff5 and Ian R. Fisherff1,ff2
ff1Department of Applied Physics and Geballe Laboratory for Advanced Materials, Stanford University, Stanford, CA 94305, USA.
ff2Stanford Institute of Energy and Materials Science, SLAC National Accelerator Laboratory, 2575 Sand Hill Road, Menlo Park, CA 94025, USA.
ff3E. L. Ginzton Laboratory, Stanford University, Stanford, CA 94305, USA.
ff4The Advanced Photon Source, Argonne National Laboratory, Argonne, IL 60439, USA.
ff5National Institute of Informatics, Hitotsubashi 2-1-2, Chiyoda-ku, Tokyo 101-8403, Japan.

High-temperature superconductivity often emerges in the proximity of a symmetry-breaking ground state. For superconducting iron arsenides, in addition to the antiferromagnetic ground state, a small structural distortion breaks the crystal's C4 rotational symmetry in the underdoped part of the phase diagram. We reveal that the representative iron arsenide Ba(Fe1−xCox)2As2 develops a large electronic anisotropy at this transition via measurements of the in-plane resistivity of detwinned single crystals, with the resistivity along the shorter b axis b being greater than a. The anisotropy reaches a maximum value of ~2 for compositions in the neighborhood of the beginning of the superconducting dome. For temperatures well above the structural transition, uniaxial stress induces a resistivity anisotropy, indicating a substantial nematic susceptibility. ©2010 American Association for the Advancement of Science

(As supplied by publisher.)

History: Received April 05, 2010; accepted July 12, 2010
Permalink: http://dx.doi.org/10.1126/science.1190482
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