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Gate-induced g-factor control and dimensional transition for donors in multivalley semiconductors

Source: Phys. Rev. B 80, 155301 (2009); doi:10.1103/PhysRevB.80.155301

Published 1 October 2009

KEYWORDS and PACS
Keywords
PACS
  • 71.55.Cn
    Impurity and defect levels in elemental semiconductors
  • 03.67.Lx
    Quantum computation architectures and implementations
  • 71.70.Ej
    Spin-orbit coupling, Zeeman and Stark splitting, Jahn-Teller effect (condensed matter)
  • 85.35.Gv
    Single electron devices
  • YEAR: 2009
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PUBLICATION DATA
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Rajib Rahman,1 Seung H. Park,1 Timothy B. Boykin,2 Gerhard Klimeck,1,3 Sven Rogge,4 and Lloyd C. L. Hollenberg5
1Network for Computational Nanotechnology, Purdue University, West Lafayette, Indiana 47907, USA
2Department of Electrical Engineering, University of Alabama, Huntsville, Alabama 35899, USA
3Jet Propulsion Laboratory, California Institute of Technology, Pasadena, California 91109, USA
4Kavli Institute of Nanoscience, Delft University of Technology, Lorentzweg 1, 2628 CJ Delft, The Netherlands
5Center for Quantum Computer Technology, School of Physics, University of Melbourne, Victoria 3010, Australia
The dependence of the g factors of semiconductor donors on applied electric and magnetic fields is of immense importance in spin-based quantum computation and in semiconductor spintronics. The donor g-factor Stark shift is sensitive to the orientation of the electric and magnetic fields and is strongly influenced by the band-structure and spin-orbit interactions of the host. Using a multimillion atom tight-binding framework, the spin-orbit Stark parameters are computed for donors in multivalley semiconductors, silicon, and germanium. Comparison with limited experimental data shows good agreement for a donor in silicon. Results for gate-induced transition from three-dimensional to two-dimensional wave-function confinement show that the corresponding g-factor shift in Si is experimentally observable, and at modest B field, O(1 T) can exceed the Stark shift of the hyperfine interaction. ©2009 The American Physical Society
History: Received 17 August 2009; published 1 October 2009
Permalink: http://link.aps.org/abstract/PRB/v80/e155301

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