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Scalable arrays of rf Paul traps in degenerate Si

Source: Appl. Phys. Lett. 95, 173102 (2009); doi:10.1063/1.3254188

Published 26 October 2009

KEYWORDS and PACS
Keywords
PACS
  • 72.20.Fr
    Low-field transport and mobility; piezoresistance (semiconductors/insulators)
  • 72.80.Cw
    Electrical conductivity of elemental semiconductors
  • 03.67.Lx
    Quantum computation architectures and implementations
  • 07.10.Cm
    Micromechanical devices and systems
  • 85.85.+j
    Micro- and nano-electromechanical systems (MEMS/NEMS) and devices
  • YEAR: 2009
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PUBLICATION DATA
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J. Britton,1 D. Leibfried,2 J. A. Beall,1 R. B. Blakestad,2 J. H. Wesenberg,3 and D. J. Wineland2
1Quantum Electrical Metrology Division, NIST, Boulder, Colorado 80305, USA
2Time and Frequency Division, NIST, Boulder, Colorado 80305, USA
3Department of Materials, University of Oxford, Oxford OX1 3PH, United Kingdom
We report techniques for the fabrication of multizone linear radio frequency Paul traps that exploit the machinability and electrical conductivity of degenerate silicon. The approach was tested by trapping and laser cooling 24Mg+ ions in the two following trap geometries: a single-zone two-layer trap and a multizone surface-electrode trap. From the measured ion motional heating rate we determine an electric field spectral density at the ion's position of approximately 1×10−10  (V/m)2·Hz−1 at omegaz/2pi=1.125  MHz when the ion lies 40  µm above the trap surface. One application of these devices is controlled manipulation of atomic ion qubits, the basis of one form of quantum information processing.
History: Received 11 August 2009; accepted 22 September 2009; published 26 October 2009
Permalink: http://link.aip.org/link/?APPLAB/95/173102/1

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