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Producing optimized ensembles of nitrogen-vacancy color centers for quantum information applications

Source: J. Appl. Phys. 106, 124904 (2010); doi:10.1063/1.3271579

Published 21 December 2009

KEYWORDS and PACS
Keywords
PACS
  • 61.72.jn
    Color centres
  • 61.72.jd
    Vacancies (point defects)
  • 61.80.Jh
    Ion radiation effects
  • 61.72.up
    Doping and impurity implantation in other materials
  • 81.40.Ef
    Cold working, work hardening and annealing
  • 78.55.Hx
    Photoluminescence in solid inorganic materials
  • 62.50.-p
    High-pressure effects in solids and liquids
  • YEAR: 2009
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PUBLICATION DATA
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Igor Aharonovich,1 Charles Santori,2 Barbara A. Fairchild,1 Julius Orwa,1 Kumaravelu Ganesan,1 Kai-Mei C. Fu,2 Raymond G. Beausoleil,2 Andrew D. Greentree,1 and Steven Prawer1
1School of Physics, University Of Melbourne, Melbourne 3010, Australia
2Hewlett-Packard Laboratories, 1501 Page Mill Rd., Palo Alto, California 94304, USA
Quantum information applications place stringent demands on the development of platforms that can host them. Color centers in diamond have been identified as important media for quantum information processing. Accordingly, the photoluminescence properties of nitrogen-vacancy (N-V) centers in diamond created by implantation and annealing are studied at cryogenic temperatures (below 10 K). We examine high pressure high temperature and chemical vapor deposition synthetic diamonds with varying nitrogen concentration and present an accurate method to estimate the concentration of the (N-V) centers created by ion implantation. The ion irradiation route produced up to 6 ppm of optically active (N-V) centers, while nitrogen implantation yielded up to 3 ppm of optically active (N-V) with 8% conversion efficiency. However, a broadening of the (N-V)− zero phonon line was observed in all samples. ©2009 American Institute of Physics
History: Received 11 September 2009; accepted 8 November 2009; published 21 December 2009
Permalink: http://link.aip.org/link/?JAPIAU/106/124904/1

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