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Exchange coupling in silicon quantum dots: Theoretical considerations for quantum computation

Source: Phys. Rev. B 81, 085313 (2010); doi:10.1103/PhysRevB.81.085313

Published 8 February 2010

PACS
  • 03.67.Lx
    Quantum computation architectures and implementations
  • 73.63.Kv
    Quantum dots (electronic transport)
  • 73.40.Qv
    Electrical properties of metal-insulator-semiconductor structures
  • 85.30.-z
    Semiconductor devices
  • YEAR: 2010
PUBLICATION DATA
Publisher:
AIP is a member of CrossRef APS
Qiuzi Li,1 Lukasz Cywiński,1,2 Dimitrie Culcer,1 Xuedong Hu,1,3,4 and S. Das Sarma1,3
1Condensed Matter Theory Center, Department of Physics, University of Maryland, College Park, Maryland 20742-4111, USA
2Institute of Physics, Polish Academy of Sciences, al. Lotników 32/46, PL 02-668 Warszawa, Poland
3Joint Quantum Institute, Department of Physics, University of Maryland, College Park, Maryland 20742-4111, USA
4Department of Physics, University at Buffalo–SUNY, Buffalo, New York 14260-1500, USA

We study exchange coupling in Si double quantum dots, which have been proposed as suitable candidates for spin qubits due to their long spin coherence times. We discuss in detail two alternative schemes which have been proposed for implementing spin qubits in quantum dots. One scheme uses spin states in a single dot and the interdot exchange coupling controls interactions between unbiased dots. The other scheme employs the singlet and triplet states of a biased double dot as the two-level system making up the qubit and exchange controls the energy splitting of the levels. Exchange in these two configurations depends differently on system parameters. Our work relies on the Heitler-London approximation and the Hund-Mulliken molecular orbital method. The results we obtain enable us to investigate the sensitivity of the system to background charge fluctuations and determine the conditions under which optimal spots, at which the influence of the charge noise is minimized, may exist in Si double quantum dot structures. ©2010 The American Physical Society
History: Received 26 June 2009; revised 23 October 2009; published 8 February 2010
Permalink: http://link.aps.org/abstract/PRB/v81/e085313
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