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Development of a tunable donor quantum dot in silicon

Source: Appl. Phys. Lett. 96, 043116 (2010); doi:10.1063/1.3299726

Published 28 January 2010

KEYWORDS and PACS
Keywords
PACS
  • 81.16.Ta
    Atom manipulation in nanofabrication and processing
  • 73.63.Kv
    Quantum dots (electronic transport)
  • 81.16.Nd
    Nanolithography in nanofabrication and processing
  • 73.23.Hk
    Coulomb blockade; single-electron tunneling
  • YEAR: 2010
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PUBLICATION DATA
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W. C. T. Lee, G. Scappucci, D. L. Thompson, and M. Y. Simmons
School of Physics and Australian Research Council Centre of Excellence for Quantum Computer Technology, University of New South Wales, Sydney, New South Wales 2052, Australia
We have developed a method to integrate a low thermal budget silicon dioxide dielectric in ultrahigh vacuum to surface gate an in-plane gated phosphorus donor quantum dot in silicon. By combining in-plane and top-gate action, the resistance of the quantum dot tunnel barriers can be tuned to change the dot from open to closed where clear Coulomb blockade of the electron transport has been observed at 4 K. Additionally the scanning tunneling microscopy patterned in-plane gates can be used to independently tune the electron number on the dot. This enhanced tunability of donor based quantum dots bodes well for the fabrication of single donor architectures. ©2010 American Institute of Physics
History: Received 6 October 2009; accepted 27 December 2009; published 28 January 2010
Permalink: http://link.aip.org/link/?APPLAB/96/043116/1

REFERENCES (13)

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  1. J. R. Tucker and T. Shen, Solid-State Electron. 42, 1061 (1998).
  2. F. J. Ruess, L. Oberbeck, M. Y. Simmons, K. E. J. Goh, A. R. Hamilton, T. Hallam, S. R. Schofield, N. J. Curson, and R. G. Clark, Nano Lett. 4, 1969 (2004).
  3. M. Y. Simmons, F. J. Rueß, K. E. J. Goh, T. Hallam, S. R. Schofield, L. Oberbeck, N. J. Curson, A. R. Hamilton, M. J. Butcher, R. G. Clark, and T. C. G. Reusch, Mol. Simul. 31, 505 (2005).
  4. A. Fuhrer, M. Fuchsle, T. C. G. Reusch, B. Weber, and M. Y. Simmons, Nano Lett. 9, 707 (2009).
  5. B. E. Kane, Nature (London) 393, 133 (1998).
  6. K. Nabors and J. White, IEEE Trans., Comput.-Aided Des. 10, 1447 (1991).
  7. G. Scappucci, F. Ratto, D. L. Thompson, T. C. G. Reusch, W. Pok, F. J. Ruess, F. Rosei, and M. Y. Simmons, Appl. Phys. Lett. 91, 222109 (2007).
  8. M. Fuechsle, F. J. Ruess, T. C. G. Reusch, M. Mitic, and M. Y. Simmons, J. Vac. Sci. Technol. B 25, 2562 (2007).
  9. W. Pok, M. A. Eriksson, and M. Y. Simmons (unpublished).
  10. A. Fuhrer (private communication), August 2008.
  11. D. V. Averin and Y. V. Nazarov, in Single Charge Tunneling, edited by H. Garbert and M. H. Devoret (Plenum, New York, 1991).
  12. H. van Houten, C. W. J. Beenakker, and A. A. M. Staring, in Single Charge Tunneling, edited by H. Garbert and M. H. Devoret (Plenum, New York, 1991).
  13. S. Huang, N. Fukata, M. Shimizu, T. Yamaguchi, T. Sekiguchi, and K. Ishibashi, Appl. Phys. Lett. 92, 213110 (2008).
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