Three-mode entanglement via tunneling-induced interference in a coupled triple-semiconductor quantum-well structure
Source: Phys. Rev. A 82, 012323 (2010); doi:10.1103/PhysRevA.82.012323
Published 22 July 2010
A simple scheme is proposed to achieve three-mode continuous-variable (CV) entanglement in a coupled triple-semiconductor quantum-well (TSQW) structure via tunneling-induced interference. In the present scheme, the TSQW structure is trapped into a triply resonant cavity, and the tunneling-induced interference effects considered here are the key to realizing entanglement. By numerically simulating the dynamics of the system, we show that the strength of tunneling-induced interference can effectively influence the period of entanglement, and the generation of entanglement does not depend intensively on the initial condition of the cavity field in our scheme. As a result, the present research provides an efficient approach to achieve three-mode CV entanglement in a semiconductor nanostructure, which may have an impact on the progress of solid-state quantum-information theory.
©2010 The American Physical Society
| History: | Received 25 April 2010; published 22 July 2010 |
| Permalink: |
http://link.aps.org/abstract/PRA/v82/e012323 |
ADVERTISEMENT


