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Three-mode entanglement via tunneling-induced interference in a coupled triple-semiconductor quantum-well structure

Source: Phys. Rev. A 82, 012323 (2010); doi:10.1103/PhysRevA.82.012323

Published 22 July 2010

PACS
  • 03.67.Mn
    Entanglement measures, witnesses, and other characterizations (quantum information)
  • 42.50.Dv
    Quantum state engineering and measurements (quantum optics)
  • 78.67.De
    Optical properties of quantum wells
  • YEAR: 2010
PUBLICATION DATA
Publisher:
AIP is a member of CrossRef APS
Xin-You Lü1,3 and Jing Wu2
1School of Physics, Ludong University, Yantai 264025, People's Republic of China
2Institute of Advanced Nanophotonics State Key Lab of Modern Optical Instrumentation, Zhejiang University, Hangzhou 310027, People's Republic of China
3Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan 430074, People's Republic of China

A simple scheme is proposed to achieve three-mode continuous-variable (CV) entanglement in a coupled triple-semiconductor quantum-well (TSQW) structure via tunneling-induced interference. In the present scheme, the TSQW structure is trapped into a triply resonant cavity, and the tunneling-induced interference effects considered here are the key to realizing entanglement. By numerically simulating the dynamics of the system, we show that the strength of tunneling-induced interference can effectively influence the period of entanglement, and the generation of entanglement does not depend intensively on the initial condition of the cavity field in our scheme. As a result, the present research provides an efficient approach to achieve three-mode CV entanglement in a semiconductor nanostructure, which may have an impact on the progress of solid-state quantum-information theory. ©2010 The American Physical Society
History: Received 25 April 2010; published 22 July 2010
Permalink: http://link.aps.org/abstract/PRA/v82/e012323
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