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Interface trap density metrology from sub-threshold transport in highly scaled undoped Si n-FinFETs

Source: J. Appl. Phys. 110, 124507 (2012); http://dx.doi.org/10.1063/1.3660697

Published 20 December 2011

KEYWORDS and PACS
Keywords
PACS
  • 85.30.Tv
    Semiconductor field effect devices
  • YEAR: 2011
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Abhijeet Paul,1 Giuseppe C. Tettamanzi,2 Sunhee Lee,1 Saumitra R. Mehrotra,1 Nadine Collaert,3 Serge Biesemans,3 Sven Rogge,2 and Gerhard Klimeck1
1School of Electrical and Computer Engineering, Network for Computational Nanotechnology, Purdue University, West Lafayette, Indiana 47907, USA
2Kavli Institute of Nanoscience, Delft University of Technology, Lorentzweg 1, 2628 CJ Delft, The Netherlands and Centre for Quantum Computation and Communication Technology, University of New South Wales, Sydney, New South Wales 2052, Australia
3IMEC, 3001 Leuven, Belgium
Channel conductance measurements can be used as a tool to study thermally activated electron transport in the sub-threshold region of state-of-art FinFETs. Together with theoretical tight-binding (TB) calculations, this technique can be used to understand the dependence of the source-to-channel barrier height (Eb) and the active channel area (Saa) on three important parameters: (i) the gate bias (Vgs), (ii) the temperature, and (iii) the FinFET cross-section size. The quantitative difference between experimental and theoretical values that we observe can be attributed to the interface traps present in these FinFETs. Therefore, based on the difference between measured and calculated values of (i) Saa and (ii) |[partial-derivative]Eb/[partial-derivative]Vgs| (channel to gate coupling), two new methods of interface trap density (Dit) metrology are outlined. These two methods are shown to be very consistent and reliable, thereby opening new ways of analyzing in situ state-of-the-art multi-gate FETs down to the few nanometer width limit. Furthermore, theoretical investigation of the spatial current density reveals volume inversion in thinner FinFETs near the threshold voltage. ©2011 American Institute of Physics
History: Received 19 February 2011; accepted 14 October 2011; published 20 December 2011
Digital Object Identifier: http://dx.doi.org/10.1063/1.3660697

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