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Size dependent biexciton binding energies in GaN quantum dots

Source: Appl. Phys. Lett. 99, 251903 (2012); http://dx.doi.org/10.1063/1.3670040

Published 20 December 2011

KEYWORDS and PACS
Keywords
PACS
  • 71.20.Nr
    Electronic structure of crystalline semiconductor compounds
  • 78.55.Cr
    Photoluminescence in III-V semiconductors
  • 71.35.-y
    Excitons and related phenomena
  • 73.21.La
    Quantum dots (electron states/collective excitations)
  • 71.15.Nc
    Total energy and cohesive energy calculations (condensed matter)
  • 78.67.Hc
    Optical properties of quantum dots
  • YEAR: 2011
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PUBLICATION DATA
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S. Amloy,1,2 K. H. Yu,1 K. F. Karlsson,1 R. Farivar,3 T. G. Andersson,3 and P. O. Holtz1
1Department of Physics, Chemistry, and Biology (IFM), Linköping University, S-58183 Linköping, Sweden
2Department of Physics, Faculty of Science, Thaksin University, TH-93110 Phatthalung, Thailand
3Applied Semiconductor Physics, Department of Microtechnology and Nanoscience, Chalmers University of Technology, S-41296 Göteborg, Sweden
Single GaN/Al(Ga)N quantum dots (QDs) have been investigated by means of microphotoluminescence. Emission spectra related to excitons and biexcitons have been identified by excitation power dependence and polarization resolved spectroscopy. All investigated dots exhibit a strong degree of linear polarization (~90%). The biexciton binding energy scales with the dot size. However, both positive and negative binding energies are found for the studied QDs. These results imply that careful size control of III-Nitride QDs would enable the emission of correlated photons with identical frequencies from the cascade recombination of the biexciton, with potential applications in the area of quantum information processing. ©2011 American Institute of Physics
History: Received 15 September 2011; accepted 13 November 2011; published 20 December 2011
Digital Object Identifier: http://dx.doi.org/10.1063/1.3670040

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