Three phonon decay mode of the 1136-cm−1 
3 vibration of oxygen in silicon
Source: Phys. Rev. B 81, 033201 (2010); doi:10.1103/PhysRevB.81.033201
Published 13 January 2010
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The (1136-cm−1) 3 vibration of oxygen in silicon is known to decay at low temperature primarily by emitting two phonons. We show here that the temperature dependence of the decay is caused by a three-phonon process. In both natural-isotope and single-isotope 30Si, the three-phonon process is identified as the emission of one 1 (612 cm−1) local mode, one 2 low-energy local mode, and one lattice mode of 524 cm−1 (where the quoted values are for 16O in natural-isotope silicon). The common assumption that the decay of a vibration proceeds through one dominant process is clearly not applicable here.
©2010 The American Physical Society
3 vibration of oxygen in silicon is known to decay at low temperature primarily by emitting two phonons. We show here that the temperature dependence of the decay is caused by a three-phonon process. In both natural-isotope and single-isotope 30Si, the three-phonon process is identified as the emission of one 1 (612 cm−1) local mode, one 2 low-energy local mode, and one lattice mode of 524 cm−1 (where the quoted values are for 16O in natural-isotope silicon). The common assumption that the decay of a vibration proceeds through one dominant process is clearly not applicable here.
©2010 The American Physical Society
| History: | Received 21 September 2009; revised 17 December 2009; published 13 January 2010 |
| Permalink: |
http://link.aps.org/abstract/PRB/v81/e033201 |
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