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Spin-Dependent Recombination between Phosphorus Donors in Silicon and Si/SiO2 Interface States Investigated with Pulsed Electrically Detected Electron Double Resonance

Source: Phys. Rev. Lett. 104, 046402 (2010); doi:10.1103/PhysRevLett.104.046402

Published 27 January 2010

PACS
  • 71.55.Cn
    Impurity and defect levels in elemental semiconductors
  • 03.67.Lx
    Quantum computation architectures and implementations
  • 73.50.Gr
    Charge carriers: generation, recombination, lifetime, trapping, mean free paths (thin films)
  • 76.30.-v
    Electron paramagnetic resonance and relaxation (condensed matter)
  • YEAR: 2010
PUBLICATION DATA
ISSN:
1553-9601 (online)
Publisher:
AIP is a member of CrossRef APS
Felix Hoehne, Hans Huebl, Bastian Galler, Martin Stutzmann, and Martin S. Brandt
Walter Schottky Institut, Technische Universität München, Am Coulombwall 3, 85748 Garching, Germany
We investigate the spin species relevant for the spin-dependent recombination used for the electrical readout of coherent spin manipulation in phosphorus-doped silicon. Via a multifrequency pump-probe experiment in pulsed electrically detected magnetic resonance, we demonstrate that the dominant spin-dependent recombination transition occurs between phosphorus donors and Si/SiO2 interface states. Combining pulses at different microwave frequencies allows us to selectively address the two spin subsystems participating in the recombination process and to coherently manipulate and detect the relative spin orientation of the two recombination partners. ©2010 The American Physical Society
History: Received 21 August 2009; published 27 January 2010
Permalink: http://link.aps.org/abstract/PRL/v104/e046402
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