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Time-resolved photoluminescence spectroscopy of an InGaAs/GaAs quantum well-quantum dots tunnel injection structure

Source: Appl. Phys. Lett. 96, 011901 (2010); doi:10.1063/1.3280384

Published 4 January 2010

KEYWORDS and PACS
Keywords
PACS
  • 78.67.Hc
    Optical properties of quantum dots
  • 73.63.Kv
    Quantum dots (electronic transport)
  • 73.63.Hs
    Quantum wells (electronic transport)
  • 78.67.De
    Optical properties of quantum wells
  • 78.47.jd
    Time resolved luminescence
  • 78.55.Cr
    Photoluminescence in III-V semiconductors
  • YEAR: 2010
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PUBLICATION DATA
ISSN:
1553-9601 (online)
Publisher:
AIP is a member of CrossRef AIP
M. Syperek,1 P. Leszczyński,1 J. Misiewicz,1 E. M. Pavelescu,2 C. Gilfert,2 and J. P. Reithmaier2
1Institute of Physics, Wroclaw University of Technology, Wybrzeze Wyspiańskiego 27, 50-370 Wroclaw, Poland
2Institute of Nanostructure Technologies and Analytics, Technische Physik, Universitaet Kassel, Heinrich-Plett-Str. 40, 34132 Kassel, Germany
Low temperature carrier dynamics in the InGaAs/GaAs quantum dot-based tunnel injection structure is studied by the time resolved photoluminescence experiment. We observed strongly modified photoluminescence kinetics between tunnel injection and reference quantum dot structures. Slowing down of the photoluminescence rise time in the tunnel injection system under weak and moderate excitation powers, we attributed to a fingerprint of a feeding process of quantum dot states with nonresonant carriers tunneling from the quantum well reservoir. We propose a simple three-level rate equation model to explain qualitatively the observed photoluminescence temporal behavior. Its result shows a good agreement with our experimental data. ©2010 American Institute of Physics
History: Received 5 November 2009; accepted 6 December 2009; published 4 January 2010
Permalink: http://link.aip.org/link/?APPLAB/96/011901/1

REFERENCES (9)

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  1. A. Fiore, A. Markus, M. Rossetti, and L. H. Li, Laser Focus World 42, 124 (2006), and references therein.
  2. Z. Mi, S. Fathpour, and P. Bhattacharya, Electron. Lett. 41, 1282 (2005).
  3. S. L. Chuang, P. K. Kondratko, J. Kim, G. Walter, N. Holonyak, Jr., R. Heller, X. Zhang, and R. Dupuis, Proc. SPIE 5738, 347 (2005).
  4. E. -M. Pavelescu, C. Gilfert, J. P. Reithmaier, A. Martin-Minguez, and I. Esquivias, IEEE Photon. Technol. Lett. 21, 999 (2009).
  5. W. Rudno-Rudziński, K. Ryczko, G. Sek, M. Syperek, J. Misiewicz, E. -M. Pavelescu, Ch. Gilfert, and J. P. Reithmeier, “Optical methods used to optimise semiconductor laser structures with tunnel injection from quantum well to InGaAs/GaAs quantum dots,” Opt. Appl. (to be published).
  6. D. Y. Oberli, J. Shah, J. L. Jewell, T. C. Damen, and N. Chand, Appl. Phys. Lett. 54, 1028 (1989).
  7. J. Szczytko, L. Kappei, J. Berney, F. Morier-Genoud, M. T. Portella-Oberli, and B. Deveaud, Phys. Rev. Lett. 93, 137401 (2004).
  8. Yu. I. Mazur, B. L. Liang, Zh. M. Wang, G. G. Tarasov, D. Guzun, G. J. Salamo, T. D. Mishima, and M. B. Johnson, J. Appl. Phys. 100, 054313 (2006).
  9. V. G. Talalaev, J. W. Tomm, N. D. Zakharov, P. Werner, U. G'osele, B. V. Novikov, A. S. Sokolov, Y. B. Samsonenko, V. A. Egorov, and G. E. Cirlin, Appl. Phys. Lett. 93, 031105 (2008).

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