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Carrier localization and nonradiative recombination in yellow emitting InGaN quantum wells

Source: Appl. Phys. Lett. 96, 031906 (2010); doi:10.1063/1.3293298

Published 20 January 2010

KEYWORDS and PACS
Keywords
PACS
  • 78.67.De
    Optical properties of quantum wells
  • 71.35.-y
    Excitons and related phenomena
  • 78.60.Hk
    Cathodoluminescence, ionoluminescence (condensed matter)
  • 72.20.Jv
    Charge carriers: generation, recombination, lifetime, and trapping (semiconductors/insulators)
  • 73.63.Hs
    Quantum wells (electronic transport)
  • 78.40.Fy
    Visible and ultraviolet spectra of semiconductors
  • YEAR: 2010
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PUBLICATION DATA
ISSN:
1553-9601 (online)
Publisher:
AIP is a member of CrossRef AIP
T. Li,1 A. M. Fischer,1 Q. Y. Wei,1 F. A. Ponce,1 T. Detchprohm,2 and C. Wetzel2
1Department of Physics, Arizona State University, Tempe, Arizona 85287-1504, USA
2Department of Physics and Future Chips Constellation, Rensselaer Polytechnic Institute, Troy, New York 12180, USA
InGaN quantum wells, with luminescence in the yellow region of the visible spectrum, have been studied using conventional and time-resolved cathodoluminescence. We observe the absence of strong localization effects and a relatively high internal quantum efficiency of ~12%, which are unexpected for InGaN in this-long wavelength emission range. We have also observed a steady decrease of the peak emission energy, and a continuous increase in the radiative recombination lifetime with temperature up to 100 K. These two features are manifestations of recombination due to nonlocalized excitons. Nonradiative recombination centers, with activation energy of ~6  meV, appear to constitute the main mechanism limiting the internal quantum efficiency of these films. ©2010 American Institute of Physics
History: Received 11 December 2009; accepted 23 December 2009; published 20 January 2010
Permalink: http://link.aip.org/link/?APPLAB/96/031906/1

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