Coherent control of electron propagation and capture in semiconductor heterostructures
Source: EPL 88, 67005 (2010); doi:10.1209/0295-5075/88/67005
Issue Date: February 2010
We theoretically study the use of quantum interference to coherently control the transverse direction in which carriers are optically injected in a semiconductor heterostructure, and the subsequent transport and capture of these carriers. We consider a structure consisting of three quantum wells, where carriers can be ejected from the middle one in a given direction by coherently controlled optical pulse excitations. After traveling through the barrier, electrons are slowed down by space-charge effects, and can be captured in the side wells by emitting a phonon. If the side wells are different, the coherent control of the injection can be monitored optically. We propose a design of a AlGaAs heterostructure for a possible experimental realization of the effects considered in this paper.
©2009
| Permalink: | http://dx.doi.org/10.1209/0295-5075/88/67005 |
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