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Coherent control of electron propagation and capture in semiconductor heterostructures

Source: EPL 88, 67005 (2010); doi:10.1209/0295-5075/88/67005

Issue Date: February 2010

PUBLICATION DATA
ISSN:
1553-9601 (online)
Publisher:
AIP is a member of CrossRef IOP Publishing
D. Reiter
Institut für Festkörpertheorie, Westfälische Wilhelms-Universität Münster - W.-Klemm Str. 10, 48149, Münster, Germany, EU. Department of Physics and Institute for Optical Sciences, University of Toronto - 60 St. George Street, Toronto, Ontario, Canada M5S 1A7.

E. Sherman


A. Najmaie


J. Sipe

We theoretically study the use of quantum interference to coherently control the transverse direction in which carriers are optically injected in a semiconductor heterostructure, and the subsequent transport and capture of these carriers. We consider a structure consisting of three quantum wells, where carriers can be ejected from the middle one in a given direction by coherently controlled optical pulse excitations. After traveling through the barrier, electrons are slowed down by space-charge effects, and can be captured in the side wells by emitting a phonon. If the side wells are different, the coherent control of the injection can be monitored optically. We propose a design of a AlGaAs heterostructure for a possible experimental realization of the effects considered in this paper. ©2009
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