Home | About Journal | Web Links | E-mail Alerts | RSS RSS Icon | Browse
Previous Article Next Article

Diameter dependent performance of high-speed, low-power InAs nanowire field-effect transistors

Source: J. Appl. Phys. 107, 014502 (2010); doi:10.1063/1.3275502

Published 4 January 2010

KEYWORDS and PACS
Keywords
PACS
  • 85.30.Tv
    Semiconductor field effect devices
  • 85.35.-p
    Nanoelectronic devices
  • YEAR: 2010
RELATED DATABASES

To view database links for this article,
you need to log in.
To view database links for this article,
you need to log in.
PUBLICATION DATA
ISSN:
1553-9601 (online)
Publisher:
AIP is a member of CrossRef AIP
M. Abul Khayer and Roger K. Lake
Department of Electrical Engineering, University of California, Riverside, California 92521-0204, USA
The diameter dependent performance metrics of InAs nanowire (NW) field-effect transistors (FETs) are investigated using an analytical two-band model and a semiclassical ballistic transport model. The first analysis of the diameter dependence of the current, the gate delay time, the power-delay product, and the energy-delay product of InAs NW FETs, which operate in the quantum capacitance limit (QCL), are presented. Because of its small density of states, which results from the lower electron effective mass, relatively large diameter (<=60  nm) InAs NW FETs operate in the QCL. Both the energy-delay and power-delay products are reduced as the diameter is reduced, and optimum designs are obtained for diameters in the range 10–40  nm. Power-delay product varies from 2×10−20  to  63×10−20  J for all devices with a source Fermi level range 0.1–0.2  eV. The gate delay time for all devices varies from 4  to  16  fs and decreases as the NW diameter increases. Analytical expressions are derived for the key device metrics for a single-moded device and compared with the numerical results. The NW FETs provide both ultralow-power switching and high speed. ©2010 American Institute of Physics
History: Received 5 June 2009; accepted 20 November 2009; published 4 January 2010
Permalink: http://link.aip.org/link/?JAPIAU/107/014502/1

REFERENCES (23)

For access to fully linked references, you need to log in. For access to fully linked references, you need to Log in.
  1. S. M. Sze, Physics of Semiconductors, 2nd ed. (Wiley, New York, 1981).
  2. J. M. Woodall, J. L. Freeouf, G. D. Pettit, T. Jackson, and P. Kirchner, J. Vac. Sci. Technol. 19, 626 (1981).
  3. M. V. Fischetti, IEEE Trans. Electron Devices 38, 634 (1991).
  4. R. Chau, S. Datta, M. Doczy, B. Doyle, B. Jin, J. Kavalieros, A. Majumder, M. Metz, and M. Radosavljevic, IEEE Trans. Nanotechnol. 4, 153 (2005).
  5. M. A. Khayer and R. K. Lake, IEEE Trans. Electron Devices 55, 2939 (2008).
  6. E. Lind, A. I. Persson, L. Samuelson, and L. E. Wersersson, Nano Lett. 6, 1842 (2006).
  7. S. A. Dayeh, D. P. R. Aplin, X. Zhou, P. K. L. Yu, E. T. Yu, and D. Wang, Small 3, 326 (2007).
  8. T. Bryllert, L. E. Wernersson, L. E. Fröberg, and L. Samuelson, IEEE Electron Device Lett. 27, 323 (2006).
  9. C. Thelander, M. T. Björk, M. W. Larsson, A. E. Hansen, L. R. Wallenberg, and L. Samuelson, Solid State Commun. 131, 573 (2004).
  10. H. T. Ng, J. Han, T. Yamada, P. Nguyen, Y. P. Chen, and M. Meyyappan, Nano Lett. 4, 1247 (2004).
  11. N. Li, E. S. Harmon, J. Hyland, D. B. Salzman, T. P. Ma, Y. Xuan, and P. D. Ye, Appl. Phys. Lett. 92, 143507 (2008).
  12. Z. Zanolli, M.-E. Pistol, L. E. Fröberg, and L. Samuelson, J. Phys.: Condens. Matter 19, 295219 (2007).
  13. D. B. Suyatin, J. Sun, A. Fuhrer, D. Wallin, L. E. Fröberg, L. S. Karlsson, I. Maximov, L. R. Wallenberg, L. Samuelson, and H. Q. Xu, Nano Lett. 8, 1100 (2008).
  14. A. C. Ford, J. C. Ho, Y.-L. Chueh, Y.-C. Tseng, Z. Fan, J. Guo, J. Bokor, and A. Javey, Nano Lett. 9, 360 (2009).
  15. A. Rahman, J. Guo, S. Datta, and M. S. Lundstrom, IEEE Trans. Electron Devices 50, 1853 (2003).
  16. J. Knoch, W. Riess, and J. Appenzeller, IEEE Electron Device Lett. 29, 372 (2008).
  17. B. M. Askerov, Electron Transport Phenomena in Semiconductors, 2nd ed. (World Scientific, Singapore, 1994).
  18. J. Wang and M. Lundstrom, IEEE Trans. Electron Devices 50, 1604 (2003).
  19. J. Adams, Appl. Math. Comput. 34, 113 (1989).
  20. P. J. Burke, Proc. SPIE 5593, 52 (2004).
  21. S. Ramo, J. R. Whinnery, and T. V. Duzer, Fields and Waves in Communication Electronics, 3rd ed. (Wiley, New York, 1994).
  22. S. A. dayeh, E. T. Yu, and D. Wang, Small 5, 77 (2009).
  23. K. Alam, Semicond. Sci. Technol. 24, 085003 (2009).

CITING ARTICLES
For access to citing articles, you need to log in.
For access to citing articles, you need to Log in.
ADVERTISEMENT