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Quantum effect on modulational instability of laser radiation in a semiconductor plasma

Source: J. Appl. Phys. 107, 023307 (2010); doi:10.1063/1.3295917

Published 29 January 2010

KEYWORDS and PACS
Keywords
PACS
  • 52.38.Hb
    Self-focussing, channeling and filamentation in plasmas
  • 42.65.Hw
    Phase conjugation; photorefractive and Kerr effects
  • 42.60.Mi
    Dynamical laser instabilities; noisy laser behavior
  • 42.60.Fc
    Laser beam modulation, tuning, and mode locking
  • 52.20.-j
    Elementary processes in plasma
  • 52.35.Mw
    Nonlinear phenomena: plasma waves, wave propagation and other interactions
  • YEAR: 2010
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PUBLICATION DATA
ISSN:
1553-9601 (online)
Publisher:
AIP is a member of CrossRef AIP
M. R. Amin
Department of Electronics and Communications Engineering, East West University, 43 Mohakhali, Dhaka 1212, Bangladesh
Modulational instability of a high power laser radiation in a homogeneous unmagnetized piezoelectric semiconductor plasma has been investigated analytically. The fluid equations of quantum hydrodynamics coupled with the Maxwell's equations have been employed to find the nonlinear response of electrons in the piezoelectric semiconductor. The analysis is carried out through the derivation of the nonlinear dispersion relation for the four-wave modulational instability. An expression for the growth rate of the instability including the quantum effect due to Bohm potential has been obtained from the nonlinear dispersion relation. The quantum effect is observed to play a vital role in the four-wave scattering process. For a particular set of parameters, the quantum effect enhances the growth rate of the modulational instability by 37% compared to the growth rate predicted by the classical theory. ©2010 American Institute of Physics
History: Received 3 October 2009; accepted 22 December 2009; published 29 January 2010
Permalink: http://link.aip.org/link/?JAPIAU/107/023307/1

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