Spatially resolved ultrafast transport current in GaAs photoswitches
Source: Appl. Phys. Lett. 96, 261110 (2010); doi:10.1063/1.3458819
Published 1 July 2010
KEYWORDS and PACS
gallium arsenide,
III-V semiconductors,
photoconducting switches,
photoconductivity,
photoemission,
solid-state plasma,
time of flight spectra
- 85.60.-q
Optoelectronic devices - YEAR: 2010
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PUBLICATION DATA
We apply a pump- and probe-scheme to coplanar stripline circuits to investigate the photocurrent response of GaAs photoswitches in time and space. We find a displacement current pulse, as reported earlier. We interpret a time-delayed second pulse as a transport current. In a time-of-flight analysis we determine the velocity of the photogenerated charge carriers in the transport current. It exceeds the Fermi and the single-particle quantum velocities. This suggests that the excitation of an electron-hole plasma and not single charge-carriers dominates the ultrafast transport current in GaAs photoswitches.
©2010 American Institute of Physics
| History: | Received 5 May 2010; accepted 10 June 2010; published 1 July 2010 |
| Permalink: |
http://link.aip.org/link/?APPLAB/96/261110/1 |
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