Ultraviolet laser generation by frequency doubling of focused Gaussian beam
Source: Opt. Eng. 50, 126501 (2012); http://dx.doi.org/10.1117/1.3659218
Published 21 November 2011
KEYWORDS and PACS
PUBLICATION DATA
A new theory for describing the ultraviolet (UV) laser generation mechanism by frequency doubling of focused Gaussian beam in nonlinear crystal was presented. The nonlinear crystal used for UV laser generation, such as
-barium borate (BBO), has dramatically small phase matching acceptance angles 
x and large walk-off angle
. Numerical simulation shows the variation of the waist of input Gaussian beam brings change in conversion efficiency and far-field transverse intensity distribution. For validating the theory, we investigated the single-pass conversion efficiency in BBO crystal by using acoustic-optic Q switched 532 nm laser; and took a photograph of fringe structure far-field intensity distribution of the UV beam. Comparison between the numerical simulation and experimental results support our theory and analysis. Our theory provides a useful tool for estimating ultraviolet laser generation processes for low power nanosecond pulsed laser and cw laser.
©2011 Society of Photo-Optical Instrumentation Engineers (SPIE)
-barium borate (BBO), has dramatically small phase matching acceptance angles 
x and large walk-off angle
. Numerical simulation shows the variation of the waist of input Gaussian beam brings change in conversion efficiency and far-field transverse intensity distribution. For validating the theory, we investigated the single-pass conversion efficiency in BBO crystal by using acoustic-optic Q switched 532 nm laser; and took a photograph of fringe structure far-field intensity distribution of the UV beam. Comparison between the numerical simulation and experimental results support our theory and analysis. Our theory provides a useful tool for estimating ultraviolet laser generation processes for low power nanosecond pulsed laser and cw laser.
©2011 Society of Photo-Optical Instrumentation Engineers (SPIE)
| History: | Received 5 September 2011; revised 17 October 2011; accepted 19 October 2011; published 21 November 2011 |
| Digital Object Identifier: | http://dx.doi.org/10.1117/1.3659218 |
REFERENCES (12)
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- C. X. Wang, G. Y. Wang, A. V. Hicks, D. R. Dudley, H. Y. Pang, and N. Hodgson, “High power Q-switched TEM00 mode diode-pumped solid state lasers with > 30W output power at 355nm,” Proc. SPIE 6100, 610019 (2006).
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