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Saturation effects in femtosecond laser ablation of silicon-on-insulator

Source: Appl. Phys. Lett. 99, 231108 (2012); http://dx.doi.org/10.1063/1.3666423

Published 8 December 2011

KEYWORDS and PACS
Keywords
PACS
  • 52.38.Mf
    Laser ablation
  • 78.47.J-
    Ultrafast pump/probe spectroscopy (<1 ps) in condensed matter
  • 68.47.-b
    Solid-gas/vacuum interfaces: types of surfaces
  • YEAR: 2011
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PUBLICATION DATA
ISSN:
1553-9601 (online)
Publisher:
AIP is a member of CrossRef AIP
Hao Zhang, D. van Oosten, D. M. Krol, and J. I. Dijkhuis
Debye Institute for Nanomaterials Science, Utrecht University, P.O. Box 80000, 3508 TA Utrecht, The Netherlands
We report a surface morphology study on single-shot submicron features fabricated on silicon on insulator by tightly focused femtosecond laser pulses. In the regime just below single-shot ablation threshold nano-tips are formed, whereas in the regime just above single-shot ablation threshold, a saturation in the ablation depth is found. We attribute this saturation by secondary laser absorption in the laser-induced plasma. In this regime, we find excellent agreement between the measured depths and a simple numerical model. When the laser fluence is further increased, a sharp increase in ablation depth is observed accompanied by a roughening of the ablated hole. ©2011 American Institute of Physics
History: Received 3 October 2011; accepted 15 November 2011; published 8 December 2011
Digital Object Identifier: http://dx.doi.org/10.1063/1.3666423

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