Applied Physics Letters, Vol. 72, No. 19, pp. 2466-2468, 11 May 1998
© 1998 American Institute of Physics. All rights reserved.
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MgxZn1
xO as a II
VI widegap semiconductor alloy
A. Ohtomo,a) M. Kawasaki, T. Koida, K. Masubuchi, and H. Koinumab)
Tokyo Institute of Technology, 4259 Nagatsuda, Midori-ku, Yokohama 226, Japan
Y. Sakurai and Y. Yoshida
Faculty of Engineering, Toyo University, 2100 Kujirai, Kawagoe 350, Japan
T. Yasuda and Y. Segawa
Photodynamic Research Center, The Institute of Physical and Chemical Research, 19-1399 Nagamachi Koeji, Aoba, Sendai 980, Japan
Received: 8 December 1997; accepted: 12 March 1998We propose a widegap IIVI semiconductor alloy, MgxZn1xO, for the fabrication of heteroepitaxial ultraviolet light emitting devices based on ZnO. The c-axis oriented MgxZn1xO films were epitaxially grown by pulsed laser deposition on ZnO epitaxial films and sapphire (0001) substrates using ceramic targets. Solid solution films were prepared with Mg content up to x = 0.33, achieving a band gap of 3.99 eV at room temperature. MgO impurity phase segregated at x
0.36. Lattice constants of MgxZn1xO films changed slightly ( ~ 1%), increasing in a axis and decreasing in c-axis direction with increasing x. These films showed ultraviolet photoluminescence at energies from 3.36 (x = 0) to 3.87 eV (x = 0.33) at 4.2 K. © 1998 American Institute of Physics. [S0003-6951(98)04219-3]
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