Applied Physics Letters, Vol. 72, No. 19, pp. 2466-2468, 11 May 1998
© 1998 American Institute of Physics. All rights reserved.
Full figure (10 kB)Fig. 1. Mg content in the MgxZn1
xO epitaxial films as a function of target Mg content. First citation in article
Full figure (13 kB)Fig. 2. Mg content dependences of the a- and c-axis lattice parameters and the cell volume of MgxZn1
xO films. Segregation of the MgO impurity phase was observed for x
0.33 of Mg content. First citation in article
Full figure (11 kB)Fig. 3. X-ray diffraction rocking curves showing (0002)
and (1
01)
scans of a Mg0.19Zn0.81O film. The width of the peaks are comparable to the highest quality pure ZnO films. First citation in article
Full figure (21 kB)Fig. 4. Transmittance spectra of MgxZn1
xO films measured at room temperature. The inset shows the band gap (Eg) determined from the spectra assuming an
2
(h
Eg) dependence, where
and h
are the absorption coefficient and the photon energy, respectively. First citation in article
Full figure (18 kB)Fig. 5. Photoluminescence (solid lines) and absorption spectra (dotted lines) of MgxZn1
xO films (0
x
0.33). The spectra were taken at 4.2 K. The inset shows the luminescence peak position as a function of Mg content. For the films with 0
x
0.14, He
Cd laser excitation (3.81 eV) was employed. For the films with 0.19
x
0.33, XeCl laser pulses (4.03 eV) were used. Solid triangles corresponded to the peaks due to phonon replicas. First citation in article