Applied Physics Letters, Vol. 72, No. 19, pp. 2466-2468, 11 May 1998
© 1998 American Institute of Physics. All rights reserved.

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FIGURES


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Fig. 1. Mg content in the MgxZn1-xO epitaxial films as a function of target Mg content. First citation in article


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Fig. 2. Mg content dependences of the a- and c-axis lattice parameters and the cell volume of MgxZn1-xO films. Segregation of the MgO impurity phase was observed for x(greater-than-or-equal-to)0.33 of Mg content. First citation in article


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Fig. 3. X-ray diffraction rocking curves showing (0002)  omega and (1[overaccent (overbar) [above] 1]01)  phi scans of a Mg0.19Zn0.81O film. The width of the peaks are comparable to the highest quality pure ZnO films. First citation in article


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Fig. 4. Transmittance spectra of MgxZn1-xO films measured at room temperature. The inset shows the band gap (Eg) determined from the spectra assuming an  alpha 2(proportional)(h nu -Eg) dependence, where  alpha and h nu are the absorption coefficient and the photon energy, respectively. First citation in article


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Fig. 5. Photoluminescence (solid lines) and absorption spectra (dotted lines) of MgxZn1-xO films (0(less-than-or-equal-to)x(less-than-or-equal-to)0.33). The spectra were taken at 4.2 K. The inset shows the luminescence peak position as a function of Mg content. For the films with 0(less-than-or-equal-to)x(less-than-or-equal-to)0.14, He(dash)Cd laser excitation (3.81 eV) was employed. For the films with 0.19(less-than-or-equal-to)x(less-than-or-equal-to)0.33, XeCl laser pulses (4.03 eV) were used. Solid triangles corresponded to the peaks due to phonon replicas. First citation in article


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