Erratum: "Evidence of localization effects in InGaN single-quantum-well ultraviolet light-emitting diodes" [Appl. Phys. Lett. 76, 1671 (2000)]

S. F. Chichibu^a)

Institute of Applied Physics, University of Tsukuba, 1-1-1 Tennodai, Tsukuba, Ibaraki 305-8573, Japan

K. Wada

Department of Materials Science and Engineering, Massachusetts Institute of Technology, 77 Massachusetts Avenue, Cambridge, MA 02139

J. Müllhäuser, O. Brandt, and K. H. Ploog

Paul-Drude-Institut für Festkörperelektronik, Hausvogteiplatz 5-7, 10117 Berlin, Germany

T. Mizutani, A. Setoguchi, R. Nakai, M. Sugiyama, and H. Nakanishi

Department of Electrical Engineering, Science University of Tokyo, 2641 Yamazaki, Noda, Chiba 278-8510, Japan

K. Torii, T. Deguchi, and T. Sota

Department of Electrical, Electronics, and Computer Engineering, Waseda University, 3-4-1 Ohkubo, Shinjuku, Tokyo 169-8555, Japan

S. Nakamura^b)

Department of Research and Development, Nichia Chemical Industries Ltd., 491 Oka, Kaminaka, Anan, Tokushima 774-8601, Japan