Applied Physics Letters, 3 January 2005
Appl. Phys. Lett. 86, 013508 (2005) (3 pages)
©2005 American Institute of Physics. All rights reserved.
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FIGURES

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Fig. 1. Fabrication processes and AFM images for Si/SiO2 DB structures with different Si potential well roughnesses. First citation in article

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Fig. 2. Typical I–V curves at 15  K for (a) sample A, (b) sample B, and (c) sample C. Dashed line in (c) shows the simulated I–V curve. First citation in article

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Fig. 3. Circuit model used in the simulation to explain the I–V curve for sample C. First citation in article

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